BUK9E1R9-40E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUK9E1R9-40E
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 349 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 10 V
Пороговое напряжение включения |Ugs(th)|: 2.1 V
Максимально допустимый постоянный ток стока |Id|: 120 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 120 nC
Время нарастания (tr): 118 ns
Выходная емкость (Cd): 1530 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0017 Ohm
Тип корпуса: I2PAK
Аналог (замена) для BUK9E1R9-40E
BUK9E1R9-40E Datasheet (PDF)
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