BUK9K52-60E - описание и поиск аналогов

 

BUK9K52-60E. Аналоги и основные параметры

Наименование производителя: BUK9K52-60E

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 32 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 10 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 16 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10.1 ns

Cossⓘ - Выходная емкость: 74 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.049 Ohm

Тип корпуса: LFPAK56D

Аналог (замена) для BUK9K52-60E

- подборⓘ MOSFET транзистора по параметрам

 

BUK9K52-60E даташит

 ..1. Size:250K  nxp
buk9k52-60e.pdfpdf_icon

BUK9K52-60E

BUK9K52-60E Dual N-channel 60 V, 55 m logic level MOSFET 24 February 2015 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q101

 8.1. Size:714K  nxp
buk9k5r6-30e.pdfpdf_icon

BUK9K52-60E

BUK9K5R6-30E Dual N-channel 30 V, 5.8 m logic level MOSFET 2 September 2015 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q

 8.2. Size:724K  nxp
buk9k5r1-30e.pdfpdf_icon

BUK9K52-60E

BUK9K5R1-30E Dual N-channel 30 V, 5.3 m logic level MOSFET 2 September 2015 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q

 9.1. Size:336K  nxp
buk9k32-100e.pdfpdf_icon

BUK9K52-60E

BUK9K32-100E Dual N-channel 100 V, 33 m logic level MOSFET 10 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q1

Другие MOSFET... BUK9K134-100E , BUK9K17-60E , BUK9K18-40E , BUK9K25-40E , BUK9K29-100E , BUK9K32-100E , BUK9K35-60E , BUK9K45-100E , AON7410 , BUK9K6R2-40E , BUK9K6R8-40E , BUK9K89-100E , BUK9K8R7-40E , BUK9Y107-80E , BUK9Y113-100E , BUK9Y11-80E , BUK9Y12-100E .

History: BLF6G27LS-100 | TSM6988DCX6 | LSG70R640GT | IXFH26N55Q | SUM90N04-3M3P

 

 

 

 

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