BUK9K52-60E
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUK9K52-60E
Маркировка: 95260E
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 32
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.1
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 16
A
Tjⓘ - Максимальная температура канала: 175
°C
Qgⓘ -
Общий заряд затвора: 5.6
nC
trⓘ -
Время нарастания: 10.1
ns
Cossⓘ - Выходная емкость: 74
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.049
Ohm
Тип корпуса: LFPAK56D
Аналог (замена) для BUK9K52-60E
BUK9K52-60E
Datasheet (PDF)
..1. Size:250K nxp
buk9k52-60e.pdf 
BUK9K52-60EDual N-channel 60 V, 55 m logic level MOSFET24 February 2015 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q101
8.1. Size:714K nxp
buk9k5r6-30e.pdf 
BUK9K5R6-30EDual N-channel 30 V, 5.8 m logic level MOSFET2 September 2015 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q
8.2. Size:724K nxp
buk9k5r1-30e.pdf 
BUK9K5R1-30EDual N-channel 30 V, 5.3 m logic level MOSFET2 September 2015 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q
9.1. Size:336K nxp
buk9k32-100e.pdf 
BUK9K32-100EDual N-channel 100 V, 33 m logic level MOSFET10 December 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q1
9.2. Size:294K nxp
buk9k6r2-40e.pdf 
BUK9K6R2-40EDual N-channel TrenchMOS logic level FET23 April 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive avalanche rated
9.3. Size:295K nxp
buk9k18-40e.pdf 
BUK9K18-40EDual N-channel TrenchMOS logic level FET23 April 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive avalanche rated
9.4. Size:305K nxp
buk9k29-100e.pdf 
BUK9K29-100EDual N-channel TrenchMOS logic level FET28 March 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive avalanche rated
9.5. Size:299K nxp
buk9k45-100e.pdf 
BUK9K45-100EDual N-channel TrenchMOS logic level FET26 March 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive avalanche rated
9.6. Size:336K nxp
buk9k8r7-40e.pdf 
BUK9K8R7-40EDual N-channel 40 V, 9.4 m logic level MOSFET10 December 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q
9.7. Size:279K nxp
buk9k12-60e.pdf 
BUK9K12-60EDual N-channel 60 V, 11.5 m logic level MOSFET8 May 2014 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q101 com
9.8. Size:330K nxp
buk9k134-100e.pdf 
BUK9K134-100EDual N-channel 100 V, 159 m logic level MOSFET10 December 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
9.9. Size:268K nxp
buk9k30-80e.pdf 
BUK9K30-80EDual N-channel 80 V, 30 m logic level MOSFET12 May 2018 Product data sheet1. General descriptionDual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC-Q101
9.10. Size:316K nxp
buk9k17-60e.pdf 
BUK9K17-60EDual N-channel 60 V, 17 m logic level MOSFET19 March 2014 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q101 Co
9.11. Size:244K nxp
buk9k35-60e.pdf 
BUK9K35-60EDual N-channel 60 V, 35 m logic level MOSFET12 November 2014 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q101
9.12. Size:288K nxp
buk9k89-100e.pdf 
BUK9K89-100EDual N-channel TrenchMOS logic level FET23 April 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive avalanche rated
9.13. Size:258K nxp
buk9k22-80e.pdf 
BUK9K22-80EDual N-channel 80 V, 22 m logic level MOSFET11 May 2018 Product data sheet1. General descriptionDual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC-Q101
9.14. Size:339K nxp
buk9k6r8-40e.pdf 
BUK9K6R8-40EDual N-channel 40 V, 7.2 m logic level MOSFET5 December 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q1
9.15. Size:263K nxp
buk9k20-80e.pdf 
BUK9K20-80EDual N-channel 80 V, 20 m logic level MOSFET11 May 2018 Product data sheet1. General descriptionDual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC-Q101
9.16. Size:314K nxp
buk9k25-40e.pdf 
BUK9K25-40EDual N-channel 40 V, 29 m logic level MOSFET10 December 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q10
Другие MOSFET... IRFP344
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