BUK9Y11-80E Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BUK9Y11-80E
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 194 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 84 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 324 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
Тип корпуса: LFPAK56 POWER-SO8
Аналог (замена) для BUK9Y11-80E
BUK9Y11-80E Datasheet (PDF)
buk9y11-80e.pdf

BUK9Y11-80EN-channel 80 V, 11 m logic level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive a
buk9y11-30b.pdf

BUK9Y11-30BN-channel TrenchMOS logic level FETRev. 01 30 August 2007 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic packageusing NXP High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible1.3
buk9y11-30b.pdf

BUK9Y11-30BN-channel TrenchMOS logic level FETRev. 01 30 August 2007 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible
buk9y113-100e.pdf

BUK9Y113-100EN-channel 100 V, 113 m logic level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetiti
Другие MOSFET... BUK9K45-100E , BUK9K52-60E , BUK9K6R2-40E , BUK9K6R8-40E , BUK9K89-100E , BUK9K8R7-40E , BUK9Y107-80E , BUK9Y113-100E , IRLB4132 , BUK9Y12-100E , BUK9Y12-40E , BUK9Y14-80E , BUK9Y15-100E , BUK9Y153-100E , BUK9Y15-60E , BUK9Y19-100E , BUK9Y21-40E .
History: VS3615GE | AM4922N | SI8429DB | IXTH22N50P | MS4N60C | FTK35N03PDFN56
History: VS3615GE | AM4922N | SI8429DB | IXTH22N50P | MS4N60C | FTK35N03PDFN56



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