Справочник MOSFET. BUZ100L

 

BUZ100L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUZ100L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 14 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 140 ns
   Cossⓘ - Выходная емкость: 830 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для BUZ100L

 

 

BUZ100L Datasheet (PDF)

 ..1. Size:122K  siemens
buz100l.pdf

BUZ100L
BUZ100L

BUZ 100LSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level dv/dt rated Ultra low on-resistance 175 C operating temperaturePin 1 Pin 2 Pin 3 also in TO-220 SMD availableG D SType VDS ID RDS(on) Package Ordering CodeBUZ 100L 50 V 60 A 0.018 TO-220 AB C67078-S1354-A2Maximum RatingsParameter Symbol Values Uni

 8.1. Size:88K  siemens
buz100s spp77n05.pdf

BUZ100L
BUZ100L

BUZ 100 SSPP77N05SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature also in SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 100 S 55 V 77 A 0.015 TO-220 AB Q67040-S4001-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25

 8.2. Size:122K  siemens
buz100.pdf

BUZ100L
BUZ100L

BUZ 100SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Ultra low on-resistance 175C operating temperature also in TO-220 SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 100 50 V 60 A 0.018 TO-220 AB C67078-S1348-A2Maximum RatingsParameter Symbol Values UnitContinuous drain

 8.3. Size:79K  siemens
buz100sl-4.pdf

BUZ100L
BUZ100L

BUZ 100SL-4Preliminary dataSIPMOS Power Transistor Quad-channel Enhancement mode Logic level Avalanche-rated dv/dt ratedType VDS ID RDS(on) Package Ordering CodeBUZ 100SL-4 55 V 7.4 A 0.023 P-DSO-28 C67078-S. . . .- . . Maximum RatingsParameter Symbol Values UnitContinuous drain current one channel active ID ATA = 25 C 7.4Pulsed drain current

 8.4. Size:105K  infineon
buz100sl.pdf

BUZ100L
BUZ100L

BUZ 100SLSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.012RDS(on) Enhancement modeContinuous drain current 70 AID Avalanche rated Logic Level dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ100SL P-TO220-3-1

 8.5. Size:107K  infineon
buz100s.pdf

BUZ100L
BUZ100L

BUZ 100SSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.015RDS(on) Enhancement modeContinuous drain current 77 AID Avalanche rated dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ100S P-TO220-3-1 Q67040-S4001-A2 Tub

 8.6. Size:229K  inchange semiconductor
buz100.pdf

BUZ100L
BUZ100L

isc N-Channel Mosfet Transistor BUZ100FEATURESStatic Drain-Source On-Resistance: R = 0.018(Max)DS(on)Ultra low on-resistanceFast Switching175 operating temperatureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current , high speed switchingSolenoid and relay driversDC-DC & DC-AC convertersABS

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