Справочник MOSFET. BUZ100L

 

BUZ100L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: BUZ100L

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 250 W

Предельно допустимое напряжение сток-исток (Uds): 50 V

Предельно допустимое напряжение затвор-исток (Ugs): 14 V

Пороговое напряжение включения Ugs(th): 2 V

Максимально допустимый постоянный ток стока (Id): 60 A

Максимальная температура канала (Tj): 175 °C

Время нарастания (tr): 140 ns

Выходная емкость (Cd): 830 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.018 Ohm

Тип корпуса: TO-220AB

Аналог (замена) для BUZ100L

 

 

BUZ100L Datasheet (PDF)

1.1. buz100l.pdf Size:122K _update_mosfet

BUZ100L
BUZ100L

BUZ 100L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Ultra low on-resistance • 175 °C operating temperature Pin 1 Pin 2 Pin 3 • also in TO-220 SMD available G D S Type VDS ID RDS(on) Package Ordering Code BUZ 100L 50 V 60 A 0.018 Ω TO-220 AB C67078-S1354-A2 Maximum Ratings Parameter Symbol Values Uni

1.2. buz100l.pdf Size:122K _siemens

BUZ100L
BUZ100L

BUZ 100L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Ultra low on-resistance • 175 °C operating temperature Pin 1 Pin 2 Pin 3 • also in TO-220 SMD available G D S Type VDS ID RDS(on) Package Ordering Code BUZ 100L 50 V 60 A 0.018 Ω TO-220 AB C67078-S1354-A2 Maximum Ratings Parameter Symbol Values Uni

 4.1. buz100.pdf Size:122K _update_mosfet

BUZ100L
BUZ100L

BUZ 100 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 100 50 V 60 A 0.018 Ω TO-220 AB C67078-S1348-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain

4.2. buz100sl-4.pdf Size:79K _update_mosfet

BUZ100L
BUZ100L

BUZ 100SL-4 Preliminary data SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type VDS ID RDS(on) Package Ordering Code BUZ 100SL-4 55 V 7.4 A 0.023 Ω P-DSO-28 C67078-S. . . .- . . Maximum Ratings Parameter Symbol Values Unit Continuous drain current one channel active ID A TA = 25 °C 7.4 Pulsed drain current

 4.3. buz100s.pdf Size:88K _update_mosfet

BUZ100L
BUZ100L

BUZ 100 S SPP77N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 100 S 55 V 77 A 0.015 Ω TO-220 AB Q67040-S4001-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25

4.4. buz100.pdf Size:122K _siemens

BUZ100L
BUZ100L

BUZ 100 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 100 50 V 60 A 0.018 Ω TO-220 AB C67078-S1348-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain

 4.5. buz100sl-4.pdf Size:79K _siemens

BUZ100L
BUZ100L

BUZ 100SL-4 Preliminary data SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type VDS ID RDS(on) Package Ordering Code BUZ 100SL-4 55 V 7.4 A 0.023 Ω P-DSO-28 C67078-S. . . .- . . Maximum Ratings Parameter Symbol Values Unit Continuous drain current one channel active ID A TA = 25 °C 7.4 Pulsed drain current

4.6. buz100s spp77n05.pdf Size:88K _siemens

BUZ100L
BUZ100L

BUZ 100 S SPP77N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 100 S 55 V 77 A 0.015 Ω TO-220 AB Q67040-S4001-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25

4.7. buz100sl.pdf Size:105K _infineon

BUZ100L
BUZ100L

BUZ 100SL SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS • N channel Drain-Source on-state resistance 0.012 RDS(on) Ω • Enhancement mode Continuous drain current 70 A ID • Avalanche rated • Logic Level • dv/dt rated • 175˚C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ100SL P-TO220-3-1

4.8. buz100s.pdf Size:107K _infineon

BUZ100L
BUZ100L

BUZ 100S SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS • N channel Drain-Source on-state resistance 0.015 RDS(on) Ω • Enhancement mode Continuous drain current 77 A ID • Avalanche rated • dv/dt rated • 175˚C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ100S P-TO220-3-1 Q67040-S4001-A2 Tub

4.9. buz100.pdf Size:229K _inchange_semiconductor

BUZ100L
BUZ100L

isc N-Channel Mosfet Transistor BUZ100 ·FEATURES ·Static Drain-Source On-Resistance : R = 0.018Ω(Max) DS(on) ·Ultra low on-resistance ·Fast Switching ·175℃ operating temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current , high speed switching ·Solenoid and relay drivers ·DC-DC & DC-AC converters ·ABS

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