BUZ12 - описание и поиск аналогов

BUZ12 SIPMOS POWER TRANSISTORS FEATURE Nchannel Enhancement mode Avalanche-rated TO-220 envelope Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VDS Drain-Source Voltage 50 V ID Continuous Drain Current TC= 65 C 42 IDpuls Pulsed Drain Current TC= 25 C 168 A IAR Avalanche Current, Limited by Tjmax 42 EAR Avalanche Energy, Peri

isc N-Channel Mosfet Transistor BUZ12 FEATURES Static Drain-Source On-Resistance R = 0.028 (Max) DS(on) SOA is Power Dissipation Limited High input impedance High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,rel

BUZ 12 A Not for new design SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 12 A 50 V 42 A 0.035 TO-220 AB C67078-S1331-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 44 C 42 Pulsed drain current IDpuls TC = 25 C 168 Avalanche curre

isc N-Channel Mosfet Transistor BUZ12A FEATURES Static Drain-Source On-Resistance R = 0.035 (Max) DS(on) SOA is Power Dissipation Limited High input impedance High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,re