Справочник MOSFET. BUZ12

 

BUZ12 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: BUZ12

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 125 W

Предельно допустимое напряжение сток-исток (Uds): 50 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 42 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 85 ns

Выходная емкость (Cd): 800 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.028 Ohm

Тип корпуса: TO-220

Аналог (замена) для BUZ12

 

 

BUZ12 Datasheet (PDF)

1.1. buz12.pdf Size:109K _update_mosfet

BUZ12
BUZ12

BUZ12 SIPMOS® POWER TRANSISTORS FEATURE • Nchannel • Enhancement mode • Avalanche-rated • TO-220 envelope • Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VDS Drain-Source Voltage 50 V ID Continuous Drain Current TC= 65°C 42 IDpuls Pulsed Drain Current TC= 25°C 168 A IAR Avalanche Current, Limited by Tjmax 42 EAR Avalanche Energy, Peri

1.2. buz12a.pdf Size:117K _update_mosfet

BUZ12
BUZ12

BUZ 12 A Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 12 A 50 V 42 A 0.035 Ω TO-220 AB C67078-S1331-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 44 °C 42 Pulsed drain current IDpuls TC = 25 °C 168 Avalanche curre

 1.3. buz12a.pdf Size:117K _siemens

BUZ12
BUZ12

BUZ 12 A Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 12 A 50 V 42 A 0.035 Ω TO-220 AB C67078-S1331-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 44 °C 42 Pulsed drain current IDpuls TC = 25 °C 168 Avalanche curre

1.4. buz12.pdf Size:109K _comset

BUZ12
BUZ12

BUZ12 SIPMOS® POWER TRANSISTORS FEATURE • Nchannel • Enhancement mode • Avalanche-rated • TO-220 envelope • Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VDS Drain-Source Voltage 50 V ID Continuous Drain Current TC= 65°C 42 IDpuls Pulsed Drain Current TC= 25°C 168 A IAR Avalanche Current, Limited by Tjmax 42 EAR Avalanche Energy, Peri

 1.5. buz12.pdf Size:229K _inchange_semiconductor

BUZ12
BUZ12

isc N-Channel Mosfet Transistor BUZ12 ·FEATURES ·Static Drain-Source On-Resistance : R = 0.028Ω(Max) DS(on) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,rel

1.6. buz12a.pdf Size:229K _inchange_semiconductor

BUZ12
BUZ12

isc N-Channel Mosfet Transistor BUZ12A ·FEATURES ·Static Drain-Source On-Resistance : R = 0.035Ω(Max) DS(on) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,re

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