BUZ12 SIPMOS POWER TRANSISTORS FEATURE Nchannel Enhancement mode Avalanche-rated TO-220 envelope Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitVDS Drain-Source Voltage 50 VID Continuous Drain Current TC= 65C 42 IDpuls Pulsed Drain Current TC= 25C 168 A IAR Avalanche Current, Limited by Tjmax 42EAR Avalanche Energy, Peri

isc N-Channel Mosfet Transistor BUZ12FEATURESStatic Drain-Source On-Resistance: R = 0.028(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,switching converters, motor drivers,rel

BUZ 12 ANot for new designSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 12 A 50 V 42 A 0.035 TO-220 AB C67078-S1331-A3Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 44 C 42Pulsed drain current IDpulsTC = 25 C 168Avalanche curre

isc N-Channel Mosfet Transistor BUZ12AFEATURESStatic Drain-Source On-Resistance: R = 0.035(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,switching converters, motor drivers,re