Справочник MOSFET. BUZ338

 

BUZ338 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUZ338
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 180 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 13.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 100 ns
   Cossⓘ - Выходная емкость: 320 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm
   Тип корпуса: TO-218AA

 Аналог (замена) для BUZ338

 

 

BUZ338 Datasheet (PDF)

 ..1. Size:355K  siemens
 buz338.pdf

BUZ338 BUZ338

SIPMOS Power Transistor BUZ 338 N channel Enhancement mode Avalanche-rated1)Type VDS ID RDS (on) Package Ordering CodeBUZ 338 500 V 13.5 A 0.4 TO-218 AA C67078-S3126-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current, TC = 28 C ID 13.5 APulsed drain current, TC =25C ID puls 54Avalanche current, limited by Tj max IAR 13.5Avalanche energy, peri

 9.1. Size:137K  siemens
 buz332a.pdf

BUZ338 BUZ338

BUZ 332 ASIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 332 A 600 V 8 A 0.9 TO-218 AA C67078-S3123-A4Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 33 C 8Pulsed drain current IDpulsTC = 25 C 32Avalanche current,limited by Tjmax IA

 9.2. Size:221K  siemens
 buz334.pdf

BUZ338 BUZ338

BUZ 334SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 334 600 V 12 A 0.5 TO-218 AA C67078-S3130-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 26 C 12Pulsed drain current IDpulsTC = 25 C 48Avalanche current,limited by Tjmax IAR

 9.3. Size:139K  siemens
 buz339.pdf

BUZ338 BUZ338

BUZ 339SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 339 500 V 11.5 A 0.5 TO-218 AA C67078-S3133-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 33 C 11.5Pulsed drain current IDpulsTC = 25 C 46Avalanche current,limited by Tjmax

 9.4. Size:218K  siemens
 buz330.pdf

BUZ338 BUZ338

BUZ 330SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 330 500 V 9.5 A 0.6 TO-218 AA C67078-S3105-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 9.5Pulsed drain current IDpulsTC = 25 C 38Avalanche current,limited by Tjmax IA

 9.5. Size:212K  siemens
 buz331.pdf

BUZ338 BUZ338

BUZ 331SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 331 500 V 8 A 0.8 TO-218 AA C67078-S3114-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 35 C 8Pulsed drain current IDpulsTC = 25 C 32Avalanche current,limited by Tjmax IAR 8

 9.6. Size:210K  inchange semiconductor
 buz330.pdf

BUZ338 BUZ338

isc N-Channel Mosfet Transistor BUZ330FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sourc

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: GP1M004A090XX

 

 
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