Справочник MOSFET. BUZ339

 

BUZ339 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUZ339
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 170 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 70 ns
   Cossⓘ - Выходная емкость: 260 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.5 Ohm
   Тип корпуса: TO-218AA

 Аналог (замена) для BUZ339

 

 

BUZ339 Datasheet (PDF)

 ..1. Size:139K  siemens
 buz339.pdf

BUZ339 BUZ339

BUZ 339SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 339 500 V 11.5 A 0.5 TO-218 AA C67078-S3133-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 33 C 11.5Pulsed drain current IDpulsTC = 25 C 46Avalanche current,limited by Tjmax

 9.1. Size:355K  siemens
 buz338.pdf

BUZ339 BUZ339

SIPMOS Power Transistor BUZ 338 N channel Enhancement mode Avalanche-rated1)Type VDS ID RDS (on) Package Ordering CodeBUZ 338 500 V 13.5 A 0.4 TO-218 AA C67078-S3126-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current, TC = 28 C ID 13.5 APulsed drain current, TC =25C ID puls 54Avalanche current, limited by Tj max IAR 13.5Avalanche energy, peri

 9.2. Size:137K  siemens
 buz332a.pdf

BUZ339 BUZ339

BUZ 332 ASIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 332 A 600 V 8 A 0.9 TO-218 AA C67078-S3123-A4Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 33 C 8Pulsed drain current IDpulsTC = 25 C 32Avalanche current,limited by Tjmax IA

 9.3. Size:221K  siemens
 buz334.pdf

BUZ339 BUZ339

BUZ 334SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 334 600 V 12 A 0.5 TO-218 AA C67078-S3130-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 26 C 12Pulsed drain current IDpulsTC = 25 C 48Avalanche current,limited by Tjmax IAR

 9.4. Size:218K  siemens
 buz330.pdf

BUZ339 BUZ339

BUZ 330SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 330 500 V 9.5 A 0.6 TO-218 AA C67078-S3105-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 9.5Pulsed drain current IDpulsTC = 25 C 38Avalanche current,limited by Tjmax IA

 9.5. Size:212K  siemens
 buz331.pdf

BUZ339 BUZ339

BUZ 331SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 331 500 V 8 A 0.8 TO-218 AA C67078-S3114-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 35 C 8Pulsed drain current IDpulsTC = 25 C 32Avalanche current,limited by Tjmax IAR 8

 9.6. Size:210K  inchange semiconductor
 buz330.pdf

BUZ339 BUZ339

isc N-Channel Mosfet Transistor BUZ330FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sourc

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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