BUZ72AL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUZ72AL
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 40 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 9 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 85 ns
Выходная емкость (Cd): 180 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.25 Ohm
Тип корпуса: TO-220AB
BUZ72AL Datasheet (PDF)
buz72al.pdf
BUZ 72AL SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic LevelPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 72 AL 100 V 9 A 0.25 TO-220 AB C67078-S1327-A3Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 9Pulsed drain current IDpulsTC = 25 C 36Avalanche current,l
buz72al.pdf
isc N-Channel Mosfet Transistor BUZ72ALFEATURESLow RDS(on)SOA is Power Dissipation LimitedNanosecond Switching Speeds100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current , high speed switchingSolenoid and relay driversDC-DC & DC-AC convertersABSOLUTE MAXIMUM RATINGS(T =25)
buz72a.pdf
BUZ72AN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE V R IDSS DS(on) DBUZ72A 100 V
buz72a.pdf
isc N-Channel Mosfet Transistor BUZ72AFEATURESLow RDS(on)SOA is Power Dissipation LimitedNanosecond Switching Speeds100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current , high speed switchingSolenoid and relay driversDC-DC & DC-AC convertersABSOLUTE MAXIMUM RATINGS(T =25)
buz72l.pdf
BUZ 72 LSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic LevelPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 72 L 100 V 10 A 0.2 TO-220 AB C67078-S1327-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 10Pulsed drain current IDpulsTC = 25 C 40Avalanche current,lim
buz72.pdf
SIPMOS Power Transistors BUZ 72BUZ 72 A N channel Enhancement mode Avalanche-ratedType VDS ID RDS (on) Package 1) Ordering CodeBUZ 72 100 V 10 A 0.20 TO-220 AB C67078-S1313-A2BUZ 72 A 100 V 9.0 A 0.25 TO-220 AB C67078-S1313-A3Maximum RatingsParameter Symbol BUZ Unit72 72 AContinuous drain current, TC =25C ID 10 9.0 APulsed drain current, TC =25C ID puls 40
buz72l.pdf
BUZ 72L SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic LevelPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 72 L 100 V 10 A 0.2 TO-220 AB C67078-S1327-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 10Pulsed drain current IDpulsTC = 25 C 40Avalanche current,li
buz72.pdf
BUZ 72SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 72 100 V 10 A 0.2 TO-220 AB C67078-S1313-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 10Pulsed drain current IDpulsTC = 25 C 40Avalanche current,limited by Tjmax IAR 10
buz72l.pdf
isc N-Channel Mosfet Transistor BUZ72LFEATURESLow RDS(on)SOA is Power Dissipation LimitedNanosecond Switching Speeds100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current , high speed switchingSolenoid and relay driversDC-DC & DC-AC convertersABSOLUTE MAXIMUM RATINGS(T =25)
buz72.pdf
isc N-Channel Mosfet Transistor BUZ72FEATURESLow RDS(on)V Rated at 20VGSSilicon Gate for Fast Switching SpeedHigh Input ImpedanceLow Drive RequirementsMajority Carrier DeviceMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned especially for applications such as switchingregulators, switching converte
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