BVSS123L. Аналоги и основные параметры
Наименование производителя: BVSS123L
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 0.225 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.17 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
Cossⓘ - Выходная емкость: 9 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 6 Ohm
Тип корпуса: SOT-23
Аналог (замена) для BVSS123L
- подборⓘ MOSFET транзистора по параметрам
BVSS123L даташит
bvss123l.pdf
BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23 http //onsemi.com Features 170 mAMPS BVSS Prefix for Automotive and Other Applications Requiring 100 VOLTS Unique Site and Control Change Requirements; AEC-Q101 RDS(on) = 6 W Qualified and PPAP Capable N-Channel These Devices are Pb-Free and are RoHS Compliant 3 MAXIMUM RATINGS Rating Symbol Value
bss123lt1g bvss123lt1g.pdf
BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23 http //onsemi.com Features 170 mAMPS BVSS Prefix for Automotive and Other Applications Requiring 100 VOLTS Unique Site and Control Change Requirements; AEC-Q101 RDS(on) = 6 W Qualified and PPAP Capable N-Channel These Devices are Pb-Free and are RoHS Compliant 3 MAXIMUM RATINGS Rating Symbol Value
bvss138l.pdf
BSS138L, BVSS138L Power MOSFET 200 mA, 50 V N-Channel SOT-23 Typical applications are DC-DC converters, power management in http //onsemi.com portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 200 mA, 50 V Features RDS(on) = 3.5 W Low Threshold Voltage (VGS(th) 0.5 V-1.5 V) Makes it Ideal for N-Channel Low Voltage
bss138l bvss138l.pdf
BSS138L, BVSS138L Power MOSFET 200 mA, 50 V N-Channel SOT-23 Typical applications are DC-DC converters, power management in www.onsemi.com portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 200 mA, 50 V Features RDS(on) = 3.5 W Low Threshold Voltage (VGS(th) 0.5 V-1.5 V) Makes it Ideal for N-Channel Low Voltage Ap
Другие IGBT... BUZ77B, BUZ83, BUZ83A, BUZ84, BUZ84A, BUZ91, BUZ91A, BUZ93, 75N75, BVSS138L, BVSS84L, BW3402, BWS2301, BXL4004, BXL4004-1E, C2M0080120D, C2M0160120D
History: AGM312MAP | CES2307
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Список транзисторов
Обновления
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