CHM1023VGP Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: CHM1023VGP
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.35 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 0.8 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.5 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 1.5 nC
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.52 Ohm
Тип корпуса: SOT-563
CHM1023VGP Datasheet (PDF)
chm1023vgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM1023VGPSURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect TransistorVOLTAGE 20 Volts CURRENT 0.5 AmpereFEATURE* Small surface mounting type. (SOT-563)* High density cell design for low RDS(ON).* Suitable for high packing density.SOT-563(1)(5)CONSTRUCTION0.50* P-Channel Enhancement0.9~1.1 1.5~1.70.50(4)(3)0.15~0.31.1~1.
chm1024vgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM1024VGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 700 mAmpereAPPLICATION* Power Management in Note book * Battery Powered System * DC/DC Converter * LCD Display inverter SOT-563FEATURE* Small surface mounting type. (SOT-563)* Low-Voltage Operation (1)(5)* High-Speed Circuits 0.500.9~1
chm1012lpagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM1012LPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 120 Volts CURRENT 10 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High powe
chm10n4ngp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM10N4NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 450 Volts CURRENT 10 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small flat package. (D2PAK)0.420(10.67)0.190(4.83)* High density cell design for extremely low RDS(ON). 0.380(9.69)0.160(4
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: AM8208 | AOT500 | TPW120R800A | 2SK2499-Z | NVMFD5485NLT1G
History: AM8208 | AOT500 | TPW120R800A | 2SK2499-Z | NVMFD5485NLT1G



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