Справочник MOSFET. CHM10N4NGP

 

CHM10N4NGP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CHM10N4NGP
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 450 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 48 nC
   trⓘ - Время нарастания: 27 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.7 Ohm
   Тип корпуса: D2PAK

 Аналог (замена) для CHM10N4NGP

 

 

CHM10N4NGP Datasheet (PDF)

 ..1. Size:67K  chenmko
 chm10n4ngp.pdf

CHM10N4NGP CHM10N4NGP

CHENMKO ENTERPRISE CO.,LTDCHM10N4NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 450 Volts CURRENT 10 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small flat package. (D2PAK)0.420(10.67)0.190(4.83)* High density cell design for extremely low RDS(ON). 0.380(9.69)0.160(4

 9.1. Size:107K  chenmko
 chm1012lpagp.pdf

CHM10N4NGP CHM10N4NGP

CHENMKO ENTERPRISE CO.,LTDCHM1012LPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 120 Volts CURRENT 10 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High powe

 9.2. Size:59K  chenmko
 chm1012pagp.pdf

CHM10N4NGP CHM10N4NGP

CHENMKO ENTERPRISE CO.,LTDCHM1012PA SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 120 Volts CURRENT 10 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

 9.3. Size:91K  chenmko
 chm1024vgp.pdf

CHM10N4NGP CHM10N4NGP

CHENMKO ENTERPRISE CO.,LTDCHM1024VGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 700 mAmpereAPPLICATION* Power Management in Note book * Battery Powered System * DC/DC Converter * LCD Display inverter SOT-563FEATURE* Small surface mounting type. (SOT-563)* Low-Voltage Operation (1)(5)* High-Speed Circuits 0.500.9~1

 9.4. Size:315K  chenmko
 chm1012tgp.pdf

CHM10N4NGP CHM10N4NGP

CHENMKO ENTERPRISE CO.,LTDCHM1012TGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 0.65 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-75/SOT-416FEATURE* Small surface mounting type. (SC-75/SOT-416)* High density cell design for low RDS(ON). * Suitable for high packing den

 9.5. Size:67K  chenmko
 chm1023vgp.pdf

CHM10N4NGP CHM10N4NGP

CHENMKO ENTERPRISE CO.,LTDCHM1023VGPSURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect TransistorVOLTAGE 20 Volts CURRENT 0.5 AmpereFEATURE* Small surface mounting type. (SOT-563)* High density cell design for low RDS(ON).* Suitable for high packing density.SOT-563(1)(5)CONSTRUCTION0.50* P-Channel Enhancement0.9~1.1 1.5~1.70.50(4)(3)0.15~0.31.1~1.

 9.6. Size:443K  chenmko
 chm1013tgp.pdf

CHM10N4NGP CHM10N4NGP

CHENMKO ENTERPRISE CO.,LTDCHM1013TGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 0.45 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-75/SOT-416FEATURE* Small surface mounting type. (SC-75/SOT-416)* High density cell design for low RDS(ON). * Suitable for high packing den

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