CHM2030JGP Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: CHM2030JGP
Тип транзистора: MOSFET
Полярность: NP
Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 20 ns
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
Тип корпуса: SO-8
Аналог (замена) для CHM2030JGP
CHM2030JGP Datasheet (PDF)
chm2030jgp.pdf

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM2030JGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 20 Volts CURRENT 6 AmpereP-channel: VOLTAGE 20 Volts CURRENT 4.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low R
chm2082jgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM2082JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 11 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High satu
chm20p06pagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM20P06PAGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 13 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small flat package. ( TO-252 )* High density cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* Rugged
chm20n06pagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM20N06PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 20 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
Другие MOSFET... CHM1433WGP , CHM1443WGP , CHM1503YJGP , CHM1592GP , CHM1592XGP , CHM1702XGP , CHM1710PAGP , CHM1825NGP , K4145 , CHM2082JGP , CHM20N06PAGP , CHM20P06PAGP , CHM2108JGP , CHM210BGP , CHM21A2PAGP , CHM21A3PAGP , CHM2301ESGP .
History: 2SK2407 | DHS021N04D | GP2M020A050X | 2V7002W | IRF3708S | RFP8P06LE | AO4803
History: 2SK2407 | DHS021N04D | GP2M020A050X | 2V7002W | IRF3708S | RFP8P06LE | AO4803



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