CHM20P06PAGP Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: CHM20P06PAGP
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 42 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 9 ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.105 Ohm
Тип корпуса: TO-252
- подбор MOSFET транзистора по параметрам
CHM20P06PAGP Datasheet (PDF)
chm20p06pagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM20P06PAGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 13 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small flat package. ( TO-252 )* High density cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* Rugged
chm2082jgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM2082JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 11 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High satu
chm2030jgp.pdf

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM2030JGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 20 Volts CURRENT 6 AmpereP-channel: VOLTAGE 20 Volts CURRENT 4.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low R
chm20n06pagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM20N06PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 20 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SM6A12NSF | IXTT360N055T2 | WMK18N50C4 | WMLL013N08HGS | IRL6283M | AOT410L | KRF7401
History: SM6A12NSF | IXTT360N055T2 | WMK18N50C4 | WMLL013N08HGS | IRL6283M | AOT410L | KRF7401



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