CHM2308ESGP Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: CHM2308ESGP
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.25 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5.4 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 0.87 ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.027 Ohm
Тип корпуса: SOT-346
- подбор MOSFET транзистора по параметрам
CHM2308ESGP Datasheet (PDF)
chm2308esgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM2308ESGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 5.4 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High s
chm2304gp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM2304GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat
chm2301esgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM2301ESGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.8 AmpereAPPLICATION* Po rtable* High speed switchFEATURESOT-23* Small surface mounting type. (SOT-23)* High density cell design for low RDS(ON)* Suitable for high packing density.* Rugged and reliable.(1)* High saturation current capabili
chm2307gp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM2307GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: HUFA75307P3 | SIHG47N60S | FMC11N60E | HGI110N08AL | SQJB40EP | SVF2N65MJ | 9N95
History: HUFA75307P3 | SIHG47N60S | FMC11N60E | HGI110N08AL | SQJB40EP | SVF2N65MJ | 9N95



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