Справочник MOSFET. CHM3055LXGP

 

CHM3055LXGP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CHM3055LXGP
   Маркировка: 3055
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 13 nC
   trⓘ - Время нарастания: 18 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: SOT-89

 Аналог (замена) для CHM3055LXGP

 

 

CHM3055LXGP Datasheet (PDF)

 ..1. Size:115K  chenmko
 chm3055lxgp.pdf

CHM3055LXGP CHM3055LXGP

CHENMKO ENTERPRISE CO.,LTDCHM3055LXGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3.7 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-62/SOT-89FEATURE* Small package. (SC-62/SOT-89 )* High density cell design for extremely low RDS(ON). 4.6MAX. 1.6MAX.* Rugged and reliab

 6.1. Size:109K  chenmko
 chm3055lapagp.pdf

CHM3055LXGP CHM3055LXGP

CHENMKO ENTERPRISE CO.,LTDCHM3055LAPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High powe

 7.1. Size:103K  chenmko
 chm3055zgp.pdf

CHM3055LXGP CHM3055LXGP

CHENMKO ENTERPRISE CO.,LTDCHM3055ZGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 4.0 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-73/SOT-223FEATURE* Small package. (SC-73/SOT-223 )1.65+0.15* High density cell design for extremely low RDS(ON). 6.50+0.200.90+0.052.

 9.1. Size:196K  chenmko
 chm3060jgp.pdf

CHM3055LXGP CHM3055LXGP

CHENMKO ENTERPRISE CO.,LTDCHM3060JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 14 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High satu

 9.2. Size:533K  chenmko
 chm3082jgp.pdf

CHM3055LXGP CHM3055LXGP

CHENMKO ENTERPRISE CO.,LTDCHM3082JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High satu

 9.3. Size:57K  chenmko
 chm3032jgp.pdf

CHM3055LXGP CHM3055LXGP

CHENMKO ENTERPRISE CO.,LTDCHM3032JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect TransistorVOLTAGE 30 Volts CURRENT 18 AmpereAPPLICATION* Servo motor control.* Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High satura

 9.4. Size:130K  chenmko
 chm3083jgp.pdf

CHM3055LXGP CHM3055LXGP

CHENMKO ENTERPRISE CO.,LTDCHM3083JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 13 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power

 9.5. Size:144K  chenmko
 chm30n15lngp.pdf

CHM3055LXGP CHM3055LXGP

CHENMKO ENTERPRISE CO.,LTDCHM30N15LNGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 150 Volts CURRENT 28 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small package. (D2PAK)* Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. 0

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History: FDG6318PZ

 

 
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