Справочник MOSFET. CHM3082JGP

 

CHM3082JGP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CHM3082JGP
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 19.6 nC
   trⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 410 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0105 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для CHM3082JGP

 

 

CHM3082JGP Datasheet (PDF)

 ..1. Size:533K  chenmko
 chm3082jgp.pdf

CHM3082JGP CHM3082JGP

CHENMKO ENTERPRISE CO.,LTDCHM3082JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High satu

 8.1. Size:130K  chenmko
 chm3083jgp.pdf

CHM3082JGP CHM3082JGP

CHENMKO ENTERPRISE CO.,LTDCHM3083JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 13 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power

 9.1. Size:196K  chenmko
 chm3060jgp.pdf

CHM3082JGP CHM3082JGP

CHENMKO ENTERPRISE CO.,LTDCHM3060JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 14 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High satu

 9.2. Size:103K  chenmko
 chm3055zgp.pdf

CHM3082JGP CHM3082JGP

CHENMKO ENTERPRISE CO.,LTDCHM3055ZGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 4.0 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-73/SOT-223FEATURE* Small package. (SC-73/SOT-223 )1.65+0.15* High density cell design for extremely low RDS(ON). 6.50+0.200.90+0.052.

 9.3. Size:115K  chenmko
 chm3055lxgp.pdf

CHM3082JGP CHM3082JGP

CHENMKO ENTERPRISE CO.,LTDCHM3055LXGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3.7 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-62/SOT-89FEATURE* Small package. (SC-62/SOT-89 )* High density cell design for extremely low RDS(ON). 4.6MAX. 1.6MAX.* Rugged and reliab

 9.4. Size:57K  chenmko
 chm3032jgp.pdf

CHM3082JGP CHM3082JGP

CHENMKO ENTERPRISE CO.,LTDCHM3032JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect TransistorVOLTAGE 30 Volts CURRENT 18 AmpereAPPLICATION* Servo motor control.* Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High satura

 9.5. Size:109K  chenmko
 chm3055lapagp.pdf

CHM3082JGP CHM3082JGP

CHENMKO ENTERPRISE CO.,LTDCHM3055LAPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High powe

 9.6. Size:144K  chenmko
 chm30n15lngp.pdf

CHM3082JGP CHM3082JGP

CHENMKO ENTERPRISE CO.,LTDCHM30N15LNGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 150 Volts CURRENT 28 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small package. (D2PAK)* Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. 0

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