CHM3128JGP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CHM3128JGP
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2.5 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 9 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 14.8 nC
Время нарастания (tr): 3.5 ns
Выходная емкость (Cd): 165 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.016 Ohm
Тип корпуса: SO-8
Аналог (замена) для CHM3128JGP
CHM3128JGP Datasheet (PDF)
chm3128jgp.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
CHENMKO ENTERPRISE CO.,LTDCHM3128JGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and
chm3120jgp.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
CHENMKO ENTERPRISE CO.,LTDCHM3120JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 10 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power
chm3120pagp.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
CHENMKO ENTERPRISE CO.,LTDCHM3120PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 36 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
chm310gp.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
CHENMKO ENTERPRISE CO.,LTDCHM310GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 170 mAmpereAPPLICATION* Servo motor control. * Other switching applications.SOT-23FEATURE* Small flat package. (SOT-23 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.* High saturation current capability. (1)(3)CO
chm3178jgp.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
CHENMKO ENTERPRISE CO.,LTDCHM3178JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 7.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power
chm3172jgp.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
CHENMKO ENTERPRISE CO.,LTDCHM3172JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 8.9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High sat
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .