CHM4435AZGP Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: CHM4435AZGP
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 6 ns
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.017 Ohm
Тип корпуса: SOT-223
Аналог (замена) для CHM4435AZGP
CHM4435AZGP Datasheet (PDF)
chm4435azgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM4435AZGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-73/SOT-223FEATURE* Small flat package. (SOT-223 )1.65+0.15* High density cell design for extremely low RDS(ON). 6.50+0.200.90+0.052.0+
chm4435ajgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM4435AJGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and reli
chm4435bjgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM4435BJGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and reli
chm4436jgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM4436JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Exceptional
Другие MOSFET... CHM4410AJGP , CHM4410BJGP , CHM4412JGP , CHM4416JGP , CHM4426JGP , CHM4431JGP , CHM4432JGP , CHM4435AJGP , 10N60 , CHM4435BJGP , CHM4436JGP , CHM4450JGP , CHM4501JGP , CHM451ANZGP , CHM4531JGP , CHM4531PAGP , CHM4532JGP .
History: IXTJ36N20 | TPCA8102 | MTN7451Q8 | PE506BA | BUK7Y3R5-40H | PHM25NQ10T | 2SK2376
History: IXTJ36N20 | TPCA8102 | MTN7451Q8 | PE506BA | BUK7Y3R5-40H | PHM25NQ10T | 2SK2376



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