CHM456NZGP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CHM456NZGP
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 3 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 19 nC
Время нарастания (tr): 8 ns
Сопротивление сток-исток открытого транзистора (Rds): 0.055 Ohm
Тип корпуса: SOT-223
Аналог (замена) для CHM456NZGP
CHM456NZGP Datasheet (PDF)
chm456nzgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM456NZGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-73/SOT-223FEATURE* Small flat package. (SC-73/SOT-223)1.65+0.15* High density cell design for extremely low RDS(ON). 6.50+0.200.90+0.05
chm4501jgp.pdf
CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM4501JGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 20 Volts CURRENT 8.3 AmpereP-channel: VOLTAGE 20 Volts CURRENT 5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low R
chm4532jgp.pdf
CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM4532JGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 30 Volts CURRENT 4.7 AmpereP-channel: VOLTAGE 30 Volts CURRENT 4.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low
chm4531jgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM4531JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 6.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power
chm4531pagp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM4531PAGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 25 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small flat package. ( TO-252 )* Super high density cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* Hi
chm4539jgp.pdf
CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM4539JGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 30 Volts CURRENT 5.8 AmpereP-channel: VOLTAGE 30 Volts CURRENT 4.9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low
chm453nzgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM453NZGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-73/SOT-223FEATURE* Small flat package. (SC-73/SOT-223)1.65+0.15* High density cell design for extremely low RDS(ON). 6.50+0.200.90+0.05
chm451anzgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM451ANZGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 7.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-73/SOT-223FEATURE* Small flat package. (SC-73/SOT-223)1.65+0.15* High density cell design for extremely low RDS(ON). 6.50+0.200.90+0.0
chm4559jgp.pdf
CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM4559JGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 60 Volts CURRENT 4.5 AmpereP-channel: VOLTAGE 60 Volts CURRENT 3.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low
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