Справочник MOSFET. CHM6060NPAGP

 

CHM6060NPAGP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CHM6060NPAGP
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 62 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 34 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 28.7 nC
   trⓘ - Время нарастания: 3 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для CHM6060NPAGP

 

 

CHM6060NPAGP Datasheet (PDF)

 ..1. Size:47K  chenmko
 chm6060npagp.pdf

CHM6060NPAGP CHM6060NPAGP

CHENMKO ENTERPRISE CO.,LTDCHM6060NPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 34 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

 7.1. Size:143K  chenmko
 chm6060rngp.pdf

CHM6060NPAGP CHM6060NPAGP

CHENMKO ENTERPRISE CO.,LTDCHM6060RNGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 60 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small package. (D2PAK)0.420(10.67)0.190(4.83)* Super high dense cell design for extremely low RDS(ON). 0.380(9.69)0.160(4.

 7.2. Size:92K  chenmko
 chm6060rpagp.pdf

CHM6060NPAGP CHM6060NPAGP

CHENMKO ENTERPRISE CO.,LTDCHM6060RPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 30 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

 9.1. Size:108K  chenmko
 chm6030lpagp.pdf

CHM6060NPAGP CHM6060NPAGP

CHENMKO ENTERPRISE CO.,LTDCHM6030LPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 40 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

 9.2. Size:183K  chenmko
 chm6056pagp.pdf

CHM6060NPAGP CHM6060NPAGP

CHENMKO ENTERPRISE CO.,LTDCHM6056PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

 9.3. Size:71K  chenmko
 chm6031lpagp.pdf

CHM6060NPAGP CHM6060NPAGP

CHENMKO ENTERPRISE CO.,LTDCHM6031LPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 55 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

 9.4. Size:71K  chenmko
 chm603alpagp.pdf

CHM6060NPAGP CHM6060NPAGP

CHENMKO ENTERPRISE CO.,LTDCHM603ALPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 20 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

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History: SSS70N10A

 

 
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