CHM83A3PAGP Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: CHM83A3PAGP
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 70 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 10 ns
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
Тип корпуса: TO-252
Аналог (замена) для CHM83A3PAGP
CHM83A3PAGP Datasheet (PDF)
chm83a3pagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM83A3PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 80 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
chm83a3ngp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM83A3NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 100 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small flat package. (D2PAK)0.420(10.67)0.190(4.83)* High density cell design for extremely low RDS(ON). 0.380(9.69)0.160(4
chm8311jgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM8311JGPSURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 7.9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High
chm830gpagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM830GPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect TransistorVOLTAGE 500 Volts CURRENT 4.5 AmpereAPPLICATION* Servo motor control.* Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON)..094 (2.40).280 (7.10)* High power a
Другие MOSFET... CHM8030LANGP , CHM80N75NGP , CHM8206JGP , CHM8207JGP , CHM8208JGP , CHM830GPAGP , CHM8311JGP , CHM83A3NGP , IRF540 , CHM8401JGP , CHM8410JGP , CHM8433JGP , CHM8435AJGP , CHM8531JGP , CHM85A3PAGP , CHM8809JGP , CHM8811JGP .
History: BRCS080C03SC | CJ3415 | 2SK1511 | MTN7N65FP | MDV1529EURH | SFF25P20S2I-02 | TPCS8204
History: BRCS080C03SC | CJ3415 | 2SK1511 | MTN7N65FP | MDV1529EURH | SFF25P20S2I-02 | TPCS8204



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