CMLDM7005 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: CMLDM7005
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 0.35 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.65 A
Tj ⓘ - Максимальная температура канала: 150 °C
Cossⓘ - Выходная емкость: 16 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.23 Ohm
Тип корпуса: SOT-563
Аналог (замена) для CMLDM7005
CMLDM7005 Datasheet (PDF)
cmldm7005.pdf

CMLDM7005CMLDM7005Rwww.centralsemi.comSURFACE MOUNTDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThese CENTRAL SEMICONDUCTOR devices are SILICON MOSFETdual N-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low rDS(ON) and low threshold voltage. The CMLDM7005R utilizes a reverse pinout confi
cmldm7003t.pdf

CMLDM7003TGSURFACE MOUNT SILICONwww.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEMOSFET The CENTRAL SEMICONDUCTOR CMLDM7003TG is a dual N-Channel enhancement-mode MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This device offers low rDS(ON), low VGS(th), and ESD protection up to 2kV.MARKIN
cmldm7002a cmldm7002a cmldm7002aj.pdf

CMLDM7002ACMLDM7002AG*CMLDM7002AJwww.centralsemi.comSURFACE MOUNTDESCRIPTION:DUAL N-CHANNELThese CENTRAL SEMICONDUCTOR devices are ENHANCEMENT-MODESILICON MOSFET dual Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7002A utilizes the USA pinout co
cmldm7003e cmldm7003je.pdf

CMLDM7003ECMLDM7003JEENHANCED SPECIFICATIONwww.centralsemi.comSURFACE MOUNTDESCRIPTION:DUAL N-CHANNELThe CENTRAL SEMICONDUCTOR CMLDM7003E ENHANCEMENT-MODEand CMLDM7003JE are Enhancement-mode SILICON MOSFETN-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7003E uti
Другие MOSFET... CMLDM5757 , CMLDM7002A , CMLDM7002AJ , CMLDM7003 , CMLDM7003E , CMLDM7003J , CMLDM7003JE , CMLDM7003TG , CS150N03A8 , CMLDM7120G , CMLDM7120T , CMLDM7484 , CMLDM7585 , CMLDM8002A , CMLDM8002AG , CMLDM8002AJ , CMLDM8005 .
History: 2SK3309K | BL3N150-K | AP6P070P | IRF630FP | VS2N7002K | 2SK612-Z | 24NM60L-T3F-T
History: 2SK3309K | BL3N150-K | AP6P070P | IRF630FP | VS2N7002K | 2SK612-Z | 24NM60L-T3F-T



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