CMLM0305 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CMLM0305
Маркировка: 5C3
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 0.35 W
Предельно допустимое напряжение сток-исток |Uds|: 50 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 0.28 A
Максимальная температура канала (Tj): 150 °C
Выходная емкость (Cd): 25 pf
Сопротивление сток-исток открытого транзистора (Rds): 2 Ohm
Тип корпуса: SOT-563
CMLM0305 Datasheet (PDF)
cmlm0305.pdf
CMLM0305CMLM0305G*Multi Discrete Modulewww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:N-CHANNEL MOSFET AND The CENTRAL SEMICONDUCTOR CMLM0305 and LOW VF SCHOTTKY DIODECMLM0305G are Multi Discrete Modules consisting of a single N-Channel enhancement-mode MOSFET and a low VF Schottky diode packaged in a space saving SOT-563 surface mount case. This device is d
cmlm0305t.pdf
CMLM0305TMulti Discrete Modulewww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:N-CHANNEL MOSFET ANDThe CENTRAL SEMICONDUCTOR CMLM0305T is a LOW VF SCHOTTKY DIODEMulti Discrete Module consisting of a single N-Channel enhancement-mode MOSFET and a low VF Schottky diode packaged in a space saving SOT-563 surface mount case. This device is designed for small signal
cmlm0574.pdf
CMLM0574Multi Discrete Modulewww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:N-CHANNEL MOSFET ANDThe CENTRAL SEMICONDUCTOR CMLM0574 is aLOW VF SCHOTTKY DIODEMulti Discrete Module consisting of a single N-Channelenhancement-mode MOSFET and a low VF Schottky diode packaged in a space saving SOT-563 surface mount case. This device is designed for small signalgener
cmlm0575.pdf
CMLM0575Multi Discrete Modulewww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:N-CHANNEL MOSFET ANDThe CENTRAL SEMICONDUCTOR CMLM0575 is aLOW VF SCHOTTKY DIODEMulti Discrete Module consisting of a single N-Channelenhancement-mode MOSFET and a low VF Schottky diode packaged in a space saving SOT-563 surface mount case. This device is designed for small signalgener
cmlm0708a.pdf
CMLM0708AMULTI DISCRETE MODULEwww.centralsemi.comSURFACE MOUNTDESCRIPTION:N-CHANNEL AND P-CHANNELThe CENTRAL SEMICONDUCTOR CMLM0708A is a COMPLEMENTARY MOSFETSMulti Discrete Module consisting of complementaryN-Channel and P-Channel Enhancement-mode MOSFETS packaged in a space saving PICOmini SOT-563 case. This device is designed for small signal general purpose
cmlm0584.pdf
CMLM0584Multi Discrete Modulewww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:P-CHANNEL MOSFET ANDThe CENTRAL SEMICONDUCTOR CMLM0584 is aLOW VF SCHOTTKY DIODEMulti Discrete Module consisting of a single P-Channelenhancement-mode MOSFET and a low VF Schottky diode packaged in a space saving SOT-563 surface mount case. This device is designed for small signalgener
cmlm0205.pdf
CMLM0205Multi Discrete Modulewww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:N-CHANNEL MOSFET ANDThe CENTRAL SEMICONDUCTOR CMLM0205 is a LOW VF SCHOTTKY DIODEMulti Discrete Module consisting of a single N-Channel MOSFET and a low VF Schottky diode packaged in a space saving SOT-563 case. This device is designed for small signal general purpose applications wher
cmlm0585.pdf
CMLM0585Multi Discrete Modulewww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:P-CHANNEL MOSFET ANDThe CENTRAL SEMICONDUCTOR CMLM0585 is a LOW VF SCHOTTKY DIODEMulti Discrete Module consisting of a single P-Channel enhancement-mode MOSFET and a low VF Schottky diode packaged in a space saving SOT-563 surface mount case. This device is designed for small signal ge
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