Справочник MOSFET. CMLM0708A

 

CMLM0708A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CMLM0708A
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 0.35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 40 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.28 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 25 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2 Ohm
   Тип корпуса: SOT-563

 Аналог (замена) для CMLM0708A

 

 

CMLM0708A Datasheet (PDF)

 ..1. Size:584K  central
 cmlm0708a.pdf

CMLM0708A CMLM0708A

CMLM0708AMULTI DISCRETE MODULEwww.centralsemi.comSURFACE MOUNTDESCRIPTION:N-CHANNEL AND P-CHANNELThe CENTRAL SEMICONDUCTOR CMLM0708A is a COMPLEMENTARY MOSFETSMulti Discrete Module consisting of complementaryN-Channel and P-Channel Enhancement-mode MOSFETS packaged in a space saving PICOmini SOT-563 case. This device is designed for small signal general purpose

 9.1. Size:534K  central
 cmlm0574.pdf

CMLM0708A CMLM0708A

CMLM0574Multi Discrete Modulewww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:N-CHANNEL MOSFET ANDThe CENTRAL SEMICONDUCTOR CMLM0574 is aLOW VF SCHOTTKY DIODEMulti Discrete Module consisting of a single N-Channelenhancement-mode MOSFET and a low VF Schottky diode packaged in a space saving SOT-563 surface mount case. This device is designed for small signalgener

 9.2. Size:531K  central
 cmlm0575.pdf

CMLM0708A CMLM0708A

CMLM0575Multi Discrete Modulewww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:N-CHANNEL MOSFET ANDThe CENTRAL SEMICONDUCTOR CMLM0575 is aLOW VF SCHOTTKY DIODEMulti Discrete Module consisting of a single N-Channelenhancement-mode MOSFET and a low VF Schottky diode packaged in a space saving SOT-563 surface mount case. This device is designed for small signalgener

 9.3. Size:533K  central
 cmlm0305.pdf

CMLM0708A CMLM0708A

CMLM0305CMLM0305G*Multi Discrete Modulewww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:N-CHANNEL MOSFET AND The CENTRAL SEMICONDUCTOR CMLM0305 and LOW VF SCHOTTKY DIODECMLM0305G are Multi Discrete Modules consisting of a single N-Channel enhancement-mode MOSFET and a low VF Schottky diode packaged in a space saving SOT-563 surface mount case. This device is d

 9.4. Size:605K  central
 cmlm0584.pdf

CMLM0708A CMLM0708A

CMLM0584Multi Discrete Modulewww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:P-CHANNEL MOSFET ANDThe CENTRAL SEMICONDUCTOR CMLM0584 is aLOW VF SCHOTTKY DIODEMulti Discrete Module consisting of a single P-Channelenhancement-mode MOSFET and a low VF Schottky diode packaged in a space saving SOT-563 surface mount case. This device is designed for small signalgener

 9.5. Size:533K  central
 cmlm0305t.pdf

CMLM0708A CMLM0708A

CMLM0305TMulti Discrete Modulewww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:N-CHANNEL MOSFET ANDThe CENTRAL SEMICONDUCTOR CMLM0305T is a LOW VF SCHOTTKY DIODEMulti Discrete Module consisting of a single N-Channel enhancement-mode MOSFET and a low VF Schottky diode packaged in a space saving SOT-563 surface mount case. This device is designed for small signal

 9.6. Size:530K  central
 cmlm0205.pdf

CMLM0708A CMLM0708A

CMLM0205Multi Discrete Modulewww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:N-CHANNEL MOSFET ANDThe CENTRAL SEMICONDUCTOR CMLM0205 is a LOW VF SCHOTTKY DIODEMulti Discrete Module consisting of a single N-Channel MOSFET and a low VF Schottky diode packaged in a space saving SOT-563 case. This device is designed for small signal general purpose applications wher

 9.7. Size:1567K  central
 cmlm0585.pdf

CMLM0708A CMLM0708A

CMLM0585Multi Discrete Modulewww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:P-CHANNEL MOSFET ANDThe CENTRAL SEMICONDUCTOR CMLM0585 is a LOW VF SCHOTTKY DIODEMulti Discrete Module consisting of a single P-Channel enhancement-mode MOSFET and a low VF Schottky diode packaged in a space saving SOT-563 surface mount case. This device is designed for small signal ge

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