CMPDM7002A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CMPDM7002A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.35 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 40 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.28 A
Tjⓘ - Максимальная температура канала: 150 °C
Cossⓘ - Выходная емкость: 25 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2 Ohm
Тип корпуса: SOT-23
Аналог (замена) для CMPDM7002A
CMPDM7002A Datasheet (PDF)
cmpdm7002a cmpdm7002a cmpdm7002ag.pdf
CMPDM7002ACMPDM7002AG*www.centralsemi.comSURFACE MOUNTN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM7002A SILICON MOSFETand CMPDM7002AG are special versions of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. These special de
cmpdm7002ae.pdf
CMPDM7002AEENHANCED SPECIFICATIONwww.centralsemi.comSURFACE MOUNT SILICONN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM7002AE MOSFETis a special ESD protected version of the 2N7002 enhancement-mode N-Channel MOSFET designed for high speed pulsed amplifier and driver applications.MARKING CODE: C702ESOT-23 CASEFEATURES:ESD protection up to 18
cmpdm7002ahc.pdf
CMPDM7002AHCSURFACE MOUNTwww.centralsemi.comN-CHANNELENHANCEMENT-MODEDESCRIPTION:SILICON MOSFETThe CENTRAL SEMICONDUCTOR CMPDM7002AHCis a High Current version of the 2N7002A Enhancement-mode N-Channel MOSFET, designed for high speed pulsed amplifier and driver applications.MARKING CODE: 702H SOT-23 CASE Device is Halogen Free by design FEATURES: ESD Protectio
cmpdm7003.pdf
CMPDM7003SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM7003 is SILICON MOSFETan Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and ESD protection up to 2kV.MARKING CODE: C
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Список транзисторов
Обновления
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