CMPDM7002AG. Аналоги и основные параметры
Наименование производителя: CMPDM7002AG
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 0.35 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 40 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.28 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
Cossⓘ - Выходная емкость: 25 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2 Ohm
Тип корпуса: SOT-23
Аналог (замена) для CMPDM7002AG
- подборⓘ MOSFET транзистора по параметрам
CMPDM7002AG даташит
cmpdm7002a cmpdm7002a cmpdm7002ag.pdf
CMPDM7002A CMPDM7002AG* www.centralsemi.com SURFACE MOUNT N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMPDM7002A SILICON MOSFET and CMPDM7002AG are special versions of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. These special de
cmpdm7002ae.pdf
CMPDM7002AE ENHANCED SPECIFICATION www.centralsemi.com SURFACE MOUNT SILICON N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMPDM7002AE MOSFET is a special ESD protected version of the 2N7002 enhancement-mode N-Channel MOSFET designed for high speed pulsed amplifier and driver applications. MARKING CODE C702E SOT-23 CASE FEATURES ESD protection up to 18
cmpdm7002ahc.pdf
CMPDM7002AHC SURFACE MOUNT www.centralsemi.com N-CHANNEL ENHANCEMENT-MODE DESCRIPTION SILICON MOSFET The CENTRAL SEMICONDUCTOR CMPDM7002AHC is a High Current version of the 2N7002A Enhancement- mode N-Channel MOSFET, designed for high speed pulsed amplifier and driver applications. MARKING CODE 702H SOT-23 CASE Device is Halogen Free by design FEATURES ESD Protectio
cmpdm7003.pdf
CMPDM7003 SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMPDM7003 is SILICON MOSFET an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and ESD protection up to 2kV. MARKING CODE C
Другие IGBT... CMNDM7001, CMNDM8001, CMPDM202PH, CMPDM203NH, CMPDM302PH, CMPDM303NH, CMPDM7002A, CMPDM7002AE, AO4468, CMPDM7002AHC, CMPDM7003, CMPDM7120G, CMPDM8002A, CMPDM8120, CMPF4391, CMPF4392, CMPF4393
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Список транзисторов
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