NDP6060L - аналоги, параметры транзистора - Справочник транзисторов

NDP6060L технические параметры

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April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 48A, 60V. RDS(ON) = 0.025 @ VGS = 5V. These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's Low drive requirements allowing operation directly from logic proprietary, high cell density, DMOS technology. This

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NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description 48A, 60V. RDS(ON) = 0.025 @ VGS = 5V. Low drive requirements allowing operation directly from logic These logic level N-Channel enhancement mode power drivers. VGS(TH)

7.1. Size:360K fairchild semi
ndp6060 ndb6060.pdf pdf_icon

March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 48A, 60V. RDS(ON) = 0.025 @ VGS=10V. transistors are produced using Fairchild's proprietary, high Critical DC electrical parameters specified at elevated cell density, DMOS technology. This very high density temperature.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur