CMPDM7120G. Аналоги и основные параметры

Наименование производителя: CMPDM7120G

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.35 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 8 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 1 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

Cossⓘ - Выходная емкость: 120 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm

Тип корпуса: SOT-23

Аналог (замена) для CMPDM7120G

- подборⓘ MOSFET транзистора по параметрам

 

CMPDM7120G даташит

 ..1. Size:327K  central
 cmpdm7120 cmpdm7120g.pdf pdf_icon

CMPDM7120G

CMPDM7120G SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMPDM7120G SILICON MOSFET is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage. MARKING CODE C7

 8.1. Size:326K  central
 cmpdm7002a cmpdm7002a cmpdm7002ag.pdf pdf_icon

CMPDM7120G

CMPDM7002A CMPDM7002AG* www.centralsemi.com SURFACE MOUNT N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMPDM7002A SILICON MOSFET and CMPDM7002AG are special versions of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. These special de

 8.2. Size:323K  central
 cmpdm7003.pdf pdf_icon

CMPDM7120G

CMPDM7003 SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMPDM7003 is SILICON MOSFET an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and ESD protection up to 2kV. MARKING CODE C

 8.3. Size:785K  central
 cmpdm7002ae.pdf pdf_icon

CMPDM7120G

CMPDM7002AE ENHANCED SPECIFICATION www.centralsemi.com SURFACE MOUNT SILICON N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMPDM7002AE MOSFET is a special ESD protected version of the 2N7002 enhancement-mode N-Channel MOSFET designed for high speed pulsed amplifier and driver applications. MARKING CODE C702E SOT-23 CASE FEATURES ESD protection up to 18

ПОКАЗАТЬ ЕЩЁ

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