CS12N60FA9H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CS12N60FA9H
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 55 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 12 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 46 nC
Время нарастания (tr): 26 ns
Выходная емкость (Cd): 190 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.65 Ohm
Тип корпуса: TO-220F
Аналог (замена) для CS12N60FA9H
CS12N60FA9H Datasheet (PDF)
cs12n60fa9h.pdf
Silicon N-Channel Power MOSFET R CS12N60F A9H VDSS 600 V General Description ID 12 A CS12N60F A9H, the silicon N-channel Enhanced PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
cs12n60fa9hd.pdf
Silicon N-Channel Power MOSFET R CS12N60F A9HD VDSS 600 V General Description ID 12 A CS12N60F A9HD, the silicon N-channel Enhanced PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario
cs12n60fa9r.pdf
Silicon N-Channel Power MOSFET R CS12N60F A9R General Description VDSS 600 V CS12N60F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
jcs12n60ct jcs12n60ft jcs12n60st jcs12n60bt.pdf
N RN-CHANNEL MOSFET JCS12N60T Package MAIN CHARACTERISTICS ID 12.0A VDSS 600 V Rdson-max 0.65 @Vgs=10V Qg 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L
cs12n60f a9r.pdf
Silicon N-Channel Power MOSFET R CS12N60F A9R General Description VDSS 600 V CS12N60F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
cs12n60f a9hd.pdf
Silicon N-Channel Power MOSFET R CS12N60F A9HD VDSS 600 V General Description ID 12 A CS12N60F A9HD, the silicon N-channel Enhanced PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario
cs12n60f a9h.pdf
Silicon N-Channel Power MOSFET R CS12N60F A9H VDSS 600 V General Description ID 12 A CS12N60F A9H, the silicon N-channel Enhanced PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
cs12n60f.pdf
BRF12N60 N-CHANNEL MOSFET/N MOS : PFC Purpose: These devices are well suited for high efficient switched mode power supplies,active power factor correction,electronic lamp ballast based on half bridge topology. : ,,
cs12n60f cs12n60p.pdf
CS12N60F,CS12N60PnvertSuzhou Convert Semiconductor Co ., Ltd.600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS12N60F TO-220F CS12N60FCS
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