CS1N60C3H - описание и поиск аналогов

 ..1. Size:530K  wuxi china
 cs1n60c3h.pdf 

Silicon N-Channel Power MOSFET R CS1N60 C3H General Description VDSS 600 V CS1N60 C3H, the silicon N-channel Enhanced ID 1.0 A PD (TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 7.1. Size:376K  wuxi china
 cs1n60c1hd.pdf 

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS1N60 C1HD General Description VDSS 600 V CS1N60 C1HD, the silicon N-channel Enhanced ID 1.5 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor

 7.2. Size:483K  wuxi china
 cs1n60c1h.pdf 

Silicon N-Channel Power MOSFET R CS1N60 C1H General Description VDSS 600 V CS1N60 C1H-BD, the silicon N-channel Enhanced ID 1.0 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.1. Size:241K  can-sheng
 cs1n60 to-252.pdf 

ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.com ShenZhen CanSheng Industry Development Co.,Ltd. TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsula

 8.2. Size:245K  can-sheng
 cs1n60 to-92.pdf 

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-92 Plastic-Encapsulate Transistors 1N60 MOSFET(N-Channel) FEATURES Robust High Voltage Terminrtion Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterrized for Use in Bridge Circuits MAXIMU

 8.3. Size:483K  crhj
 cs1n60 c1h.pdf 

Silicon N-Channel Power MOSFET R CS1N60 C1H General Description VDSS 600 V CS1N60 C1H-BD, the silicon N-channel Enhanced ID 1.0 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.4. Size:537K  crhj
 cs1n60 a1h.pdf 

Silicon N-Channel Power MOSFET R CS1N60 A1H General Description VDSS 600 V CS1N60 A1H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.5. Size:532K  crhj
 cs1n60 a3h.pdf 

Silicon N-Channel Power MOSFET R CS1N60 A3H General Description VDSS 600 V CS1N60 A3H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25 ) 25 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.6. Size:1006K  crhj
 cs1n60 b1r.pdf 

Silicon N-Channel Power MOSFET R CS1N60 B1R General Description VDSS 600 V CS1N60 B1R, the silicon N-channel Enhanced ID 1.5 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.7. Size:991K  crhj
 cs1n60 b3r.pdf 

Silicon N-Channel Power MOSFET R CS1N60 B3R General Description VDSS 600 V CS1N60 B3R, the silicon N-channel Enhanced ID 1.5 A PD (TC=25 ) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.8. Size:530K  crhj
 cs1n60 c3h.pdf 

Silicon N-Channel Power MOSFET R CS1N60 C3H General Description VDSS 600 V CS1N60 C3H, the silicon N-channel Enhanced ID 1.0 A PD (TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.9. Size:262K  foshan
 cs1n60f.pdf 

BRF1N60(CS1N60F) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25

 8.10. Size:424K  wuxi china
 cs1n60a1h.pdf 

Silicon N-Channel Power MOSFET R CS1N60 A1H General Description VDSS 600 V CS1N60 A1H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.11. Size:1006K  wuxi china
 cs1n60b1r.pdf 

Silicon N-Channel Power MOSFET R CS1N60 B1R General Description VDSS 600 V CS1N60 B1R, the silicon N-channel Enhanced ID 1.5 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.12. Size:511K  wuxi china
 cs1n60a4h.pdf 

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS1N60 A4H General Description VDSS 600 V CS1N60 A4H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25 ) 25 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor

 8.13. Size:991K  wuxi china
 cs1n60b3r.pdf 

Silicon N-Channel Power MOSFET R CS1N60 B3R General Description VDSS 600 V CS1N60 B3R, the silicon N-channel Enhanced ID 1.5 A PD (TC=25 ) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.14. Size:422K  wuxi china
 cs1n60a3h.pdf 

Silicon N-Channel Power MOSFET R CS1N60 A3H General Description VDSS 600 V CS1N60 A3H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25 ) 25 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power