CS1N65B3 - Даташиты. Аналоги. Основные параметры
Наименование производителя: CS1N65B3
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 32 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 4.5 ns
Cossⓘ - Выходная емкость: 17 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 9.5 Ohm
Тип корпуса: TO-251
Аналог (замена) для CS1N65B3
CS1N65B3 Datasheet (PDF)
cs1n65b3.pdf

Silicon N-Channel Power MOSFET R CS1N65 B3 General Description VDSS 650 V CS1N65 B3, the silicon N-channel Enhanced ID 1.5 A PD (TC=25) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs1n65b1.pdf

Silicon N-Channel Power MOSFET R CS1N65 B1 General Description VDSS 650 V CS1N65 B1, the silicon N-channel Enhanced ID 1.5 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs1n65 a1.pdf

Silicon N-Channel Power MOSFET R CS1N65 A1 General Description VDSS 650 V CS1N65 A1, the silicon N-channel Enhanced ID 0.8 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs1n65 b1.pdf

Silicon N-Channel Power MOSFET R CS1N65 B1 General Description VDSS 650 V CS1N65 B1, the silicon N-channel Enhanced ID 1.5 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
Другие MOSFET... CS1N60B1R , CS1N60B3R , CS1N60C1H , CS1N60C3H , CS1N60F , CS1N65A1 , CS1N65A3 , CS1N65B1 , AO3407 , CS1N70A3H-G , CS1N80 , CS1N80A1H , CS1N80A3H , CS1N80A4H , CS20N03D , CS20N50A8H , CS20N50ANH .
History: SLP5N65S | SST309 | SVF4N60CADTR | FDH34N40 | FDD390N15ALZ | SVF4N60DTR | SVF4N150PF
History: SLP5N65S | SST309 | SVF4N60CADTR | FDH34N40 | FDD390N15ALZ | SVF4N60DTR | SVF4N150PF



Список транзисторов
Обновления
MOSFET: MPT035N08S | MPT035N08P | MPG150N10S | MPG150N10P | MPG120N06S | MPG120N06P | MPG08N68S | MPG08N68P | MPF10N65 | MDT4N65 | MDT30P10D | MD70N10 | MD50N20 | MD25N50 | MD20N50 | MD100N20
Popular searches
a970 transistor | 2sb560 | tip31c transistor equivalent | 2sc1815 datasheet | mj15015 | 13003 transistor datasheet | 2n3416 | bdx53c