Справочник MOSFET. CS24N40A8

 

CS24N40A8 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CS24N40A8
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 24 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 72 ns
   Cossⓘ - Выходная емкость: 322 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.175 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для CS24N40A8

 

 

CS24N40A8 Datasheet (PDF)

 ..1. Size:344K  wuxi china
 cs24n40a8.pdf

CS24N40A8 CS24N40A8

Silicon N-Channel Power MOSFET R CS24N40 A8 General Description VDSS 400 V CS24N40 A8, the silicon N-channel Enhanced ID 24 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.14 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 7.1. Size:221K  crhj
 cs24n40f a9h.pdf

CS24N40A8 CS24N40A8

Silicon N-Channel Power MOSFET R CS24N40F A9H General Description VDSS 400 V CS24N40F A9H, the silicon N-channel Enhanced ID 24 A PD (TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.14 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 7.2. Size:344K  crhj
 cs24n40 a8.pdf

CS24N40A8 CS24N40A8

Silicon N-Channel Power MOSFET R CS24N40 A8 General Description VDSS 400 V CS24N40 A8, the silicon N-channel Enhanced ID 24 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.14 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 9.1. Size:1012K  jilin sino
 jcs24n50wh-abh.pdf

CS24N40A8 CS24N40A8

N lSX:_W:WHe^vfSO{ N- CHANNEL MOSFET RJCS24N50H ;NSpe MAIN CHARACTERISTICS \ Package ID 24 A VDSS 500 V Rdson-max 0.19 @Vgs=10V Qg-typ 81nC APPLICATIONS (u l High efficienc

 9.2. Size:990K  jilin sino
 jcs24n50wh jcs24n50abh.pdf

CS24N40A8 CS24N40A8

N N- CHANNEL MOSFET RJCS24N50H MAIN CHARACTERISTICS Package ID 24 A VDSS 500 V Rdson-max 0.19 @Vgs=10V Qg-typ 81nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

 9.3. Size:678K  crhj
 cs24n50 anhd.pdf

CS24N40A8 CS24N40A8

Silicon N-Channel Power MOSFET R CS24N50 ANHD General Description VDSS 500 V CS24N50 ANHD, the silicon N-channel Enhanced ID 24 A PD(TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 9.4. Size:124K  china
 cs24n50.pdf

CS24N40A8

CS24N50 N PD TC=25 300 W 0.40 W/ ID VGS=10V,TC=25 24 A IDM 96 VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.42 /W BVDSS VGS=0V,ID=0.25mA 500 V RDS on VGS=10V,ID=12A 0.23 VGS th VDS=VGS,ID=4mA 2.

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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