CS2N60FA9H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CS2N60FA9H
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 24 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 31 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 4.5 Ohm
Тип корпуса: TO-220F
Аналог (замена) для CS2N60FA9H
CS2N60FA9H Datasheet (PDF)
cs2n60fa9h.pdf
Silicon N-Channel Power MOSFET R CS2N60F A9H General Description VDSS 600 V CS2N60F A9H, the silicon N-channel Enhanced ID 2 A PD (TC=25) 24 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
jcs2n60t jcs2n60v jcs2n60r jcs2n60c jcs2n60f.pdf
R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS l High efficiency switch l mode power supplies l l Electronic lamp ballasts l LED based on half bridge l LED power supplie FEATURES l Low gate c
jcs2n60t jcs2n60mf jcs2n60v jcs2n60r jcs2n60c jcs2n60f.pdf
R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplie FEATURES
jcs2n60vb jcs2n60rb jcs2n60cb jcs2n60fb jcs2n60mb jcs2n60mfb.pdf
N RN-CHANNEL MOSFET JCS2N60B MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V RdsonVgs=10V 4.5 -MAX Qg-TYP 5.9nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
jcs2n60t jcs2n60mf jcs2n60v jcs2n60r jcs2n60n jcs2n60c jcs2n60f.pdf
R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplie FEATURES
jcs2n60r jcs2n60v jcs2n60c jcs2n60f.pdf
N RN-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max 5 Vgs=10V Qg 15.3 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURES
cs2n60f a9h.pdf
Silicon N-Channel Power MOSFET R CS2N60F A9H General Description VDSS 600 V CS2N60F A9H, the silicon N-channel Enhanced ID 2 A PD (TC=25) 24 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs2n60f cs2n60p cs2n60u cs2n60d cs2n60c.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS2N60F,CS2N60P,CS2N60U,CS2N60D,CS2N60C600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS2N60F
jcs2n60f.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor JCS2N60FFEATURESLow gate chargeHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency switching mode power supplyElectronic ballastUPSABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918