CS3R50A3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CS3R50A3
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 35 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 3 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 8.5 nC
Время нарастания (tr): 14 ns
Выходная емкость (Cd): 34 pf
Сопротивление сток-исток открытого транзистора (Rds): 3 Ohm
Тип корпуса: TO-251
CS3R50A3 Datasheet (PDF)
cs3r50a3.pdf
Silicon N-Channel Power MOSFET R CS3R50 A3 General Description VDSS 500 V CS3R50 A3, the silicon N-channel Enhanced ID 3 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi
cs3r50 a4.pdf
Silicon N-Channel Power MOSFET R CS3R50 A4 General Description VDSS 500 V CS3R50 A4, the silicon N-channel Enhanced ID 3 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs3r50f a9.pdf
Silicon N-Channel Power MOSFET R CS3R50F A9 General Description VDSS 500 V CS3R50F A9, the silicon N-channel Enhanced ID 3 A PD (TC=25) 24 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
cs3r50 a3.pdf
Silicon N-Channel Power MOSFET R CS3R50 A3 General Description VDSS 500 V CS3R50 A3, the silicon N-channel Enhanced ID 3 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi
cs3r50fa9.pdf
Silicon N-Channel Power MOSFET R CS3R50F A9 General Description VDSS 500 V CS3R50F A9, the silicon N-channel Enhanced ID 3 A PD (TC=25) 24 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
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