CS48N78 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: CS48N78
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 100 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 70 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 82 nC
trⓘ - Время нарастания: 13 ns
Cossⓘ - Выходная емкость: 459 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0072 Ohm
Тип корпуса: TO-220
- подбор MOSFET транзистора по параметрам
CS48N78 Datasheet (PDF)
cs48n78.pdf

CS48N78 PbCS48N78Pb Free Plating Product70V,80A N-Channel Trench Process Power MOSFETGeneral Description The CS48N78 is N-channel MOS Field Effect Transistor CS48N78designed for high current switching applications. Rugged EAS (TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features D
cs48n75.pdf

CS48N75 PbCS48N75Pb Free Plating Product70V,68A N-Channel Trench Process Power MOSFETGeneral Description The is N-channel MOS Field Effect Transistor CS48N75designed for high current switching applications. Rugged EAS CS48N75(TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features DS
cs48n80.pdf

CS48N80 PbCS48N80Pb Free Plating Product70V,87A N-Channel Trench Process Power MOSFETGeneral Description The CS48N80 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS CS48N80capability and ultra low RDS(ON) is suitable for PWM, load (TO-220 HeatSink)switching especially for E-Bike controller applications. Features
cs48n18.pdf

CS48N18 PbCS48N18Pb Free Plating Product70V,158A N-Channel Trench Process Power MOSFETGeneral Description CS48N18The CS48N18 is N-channel MOS Field Effect Transistor (TO-220 HeatSink)designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. DSGFea
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: KP813A | SDF120JDA-D | HYG800P10LR1D | SFF75N10 | KNB1906A | FDPF8N50NZU
History: KP813A | SDF120JDA-D | HYG800P10LR1D | SFF75N10 | KNB1906A | FDPF8N50NZU



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
irf3205 datasheet | oc71 | njw0302g | 2n3904 transistor equivalent | 2sc2312 | bu406 datasheet | irfb7437 | tip32a