ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-252 Plastic-Encapsulate TransistorsTO-252 Plastic-Encapsulate TransistorsTO-252 Plastic-Encapsulate TransistorsTO-252 Plastic-Encapsula

Silicon N-Channel Power MOSFET R CS4N60 ARRD General Description VDSS 600 V CS4N60 ARRD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

Silicon N-Channel Power MOSFET R CS4N60 A3TDY General Description VDSS 600 V CS4N60 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

Silicon N-Channel Power MOSFET R CS4N60 A7HD General Description VDSS 600 V CS4N60 A7HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

Silicon N-Channel Power MOSFET R CS4N60 A3R General Description VDSS 600 V CS4N60 A3R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Silicon N-Channel Power MOSFET R CS4N60 A4TDY General Description VDSS 600 V CS4N60 A4TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

Silicon N-Channel Power MOSFET R CS4N60 A4R General Description VDSS 600 V CS4N60 A4R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Silicon N-Channel Power MOSFET R CS4N60 A8HD General Description VDSS 600 V CS4N60 A8HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS4N60 A3HD General Description VDSS 600 V CS4N60 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS4N60 A4HD General Description VDSS 600 V CS4N60 A4HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

BR4N60(CS4N60) N-CHANNEL MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)

N RN-CHANNEL MOSFETJCS4N60B Package MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS RdsonVgs=10V 2.4 13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

N RN-CHANNEL MOSFET JCS4N60B Package MAIN CHARACTERISTICS ID 4.0 A VDSS 600 V 2.4 RdsonVgs=10VQg 18.1nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power su

N RN-CHANNEL MOSFET JCS4N60C MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson Typ 2.0 Vgs=10V Max 2.5 Qg-typ 17.5nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

R JCS4N60E JCS4N60E MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson_max 2.35 Vgs=10V Qg-typ 11.8nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS4N60 \ Package ;NSpe MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS Rdson 2.5 @Vgs=10V27 nC Qg APPLICATIONS (u High efficiency switch

Silicon N-Channel Power MOSFET R CS4N60F A9R General Description VDSS 600 V CS4N60F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS4N60F A9TDY General Description VDSS 600 V CS4N60F A9TDY, the silicon N-channel ID 4 A PD(TC=25) 30 W Enhanced VDMOSFETs, is obtained by the self-aligned RDS(ON)Typ 2.0 planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

Silicon N-Channel Power MOSFET R CS4N60F A9HD General Description VDSS 600 V CS4N60F A9HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

CS4N60FA9HD600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability.0.189(4.80)0.173(4.40) Low gate charge.0.409(10.40)0.378(9.60) 0.114(2.90) Low reverse transfer capacitances.0.098(2.50) 100% single pulse avalanche energy test.0.638(16.20)0.606(15.40)Marking code Mechanical dataG D S Ep

BRF4N60(CS4N60F) N-CHANNEL MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25

Silicon N-Channel Power MOSFET R CS4N60 A4TDY General Description VDSS 600 V CS4N60 A4TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

Silicon N-Channel Power MOSFET R CS4N60F A9TDY General Description VDSS 600 V CS4N60F A9TDY, the silicon N-channel ID 4 A PD(TC=25) 30 W Enhanced VDMOSFETs, is obtained by the self-aligned RDS(ON)Typ 2.0 planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS4N60 A3HD General Description VDSS 600 V CS4N60 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor

Silicon N-Channel Power MOSFET R CS4N60 A7HD General Description VDSS 600 V CS4N60 A7HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

Silicon N-Channel Power MOSFET R CS4N60 A3TDY General Description VDSS 600 V CS4N60 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

Silicon N-Channel Power MOSFET R CS4N60 ARRD General Description VDSS 600 V CS4N60 ARRD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

Silicon N-Channel Power MOSFET R CS4N60F A9R General Description VDSS 600 V CS4N60F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS4N60 A3R General Description VDSS 600 V CS4N60 A3R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Silicon N-Channel Power MOSFET R CS4N60 A4R General Description VDSS 600 V CS4N60 A4R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS4N60 A4HD General Description VDSS 600 V CS4N60 A4HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor

Silicon N-Channel Power MOSFET R CS4N60 A8HD General Description VDSS 600 V CS4N60 A8HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

nvertSuzhou Convert Semiconductor Co ., Ltd.CS4N60F,CS4N60P,CS4N60U,CS4N60D600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS4N60F TO-220F