CS4N60A3HD Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: CS4N60A3HD
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 75 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 6.5 ns
Cossⓘ - Выходная емкость: 55 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.3 Ohm
Тип корпуса: TO-251
Аналог (замена) для CS4N60A3HD
CS4N60A3HD Datasheet (PDF)
cs4n60a3hd.pdf

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS4N60 A3HD General Description VDSS 600 V CS4N60 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor
cs4n60a3tdy.pdf

Silicon N-Channel Power MOSFET R CS4N60 A3TDY General Description VDSS 600 V CS4N60 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
cs4n60a3r.pdf

Silicon N-Channel Power MOSFET R CS4N60 A3R General Description VDSS 600 V CS4N60 A3R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs4n60a4tdy.pdf

Silicon N-Channel Power MOSFET R CS4N60 A4TDY General Description VDSS 600 V CS4N60 A4TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
Другие MOSFET... CS48N75 , CS48N78 , CS48N80 , CS48N88 , CS4905S , CS4J60A3-G , CS4J60B3-G , CS4N60 , 60N06 , CS4N60A3TDY , CS4N60A4HD , CS4N60A4TDY , CS4N60A7HD , CS4N60A8HD , CS4N60ARRD , CS4N60F , CS4N60FA9HD .
History: IRL520LPBF | AP9987GH | STI11NM60ND
History: IRL520LPBF | AP9987GH | STI11NM60ND



Список транзисторов
Обновления
MOSFET: JMTK080P03A | JMTK068N07A | JMTK060P03A | JMTK060N06A | JMTK050P03A | JMTK035N04L | JMTK018N03A | JMTI60N04A | JMTI50N06B | JMTI320N10A | JMTI3005A | JMTI290N06A | JMTI210P02A | JMTI10N10A | JMTI080P03A | JMTI080N02A
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