Справочник MOSFET. CS4N60A4HD

 

CS4N60A4HD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CS4N60A4HD
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 14.5 nC
   trⓘ - Время нарастания: 6.5 ns
   Cossⓘ - Выходная емкость: 55 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.3 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для CS4N60A4HD

 

 

CS4N60A4HD Datasheet (PDF)

 ..1. Size:333K  wuxi china
 cs4n60a4hd.pdf

CS4N60A4HD CS4N60A4HD

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS4N60 A4HD General Description VDSS 600 V CS4N60 A4HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor

 6.1. Size:351K  wuxi china
 cs4n60a4tdy.pdf

CS4N60A4HD CS4N60A4HD

Silicon N-Channel Power MOSFET R CS4N60 A4TDY General Description VDSS 600 V CS4N60 A4TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 6.2. Size:277K  wuxi china
 cs4n60a4r.pdf

CS4N60A4HD CS4N60A4HD

Silicon N-Channel Power MOSFET R CS4N60 A4R General Description VDSS 600 V CS4N60 A4R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.1. Size:317K  wuxi china
 cs4n60a3hd.pdf

CS4N60A4HD CS4N60A4HD

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS4N60 A3HD General Description VDSS 600 V CS4N60 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor

 7.2. Size:234K  wuxi china
 cs4n60a7hd.pdf

CS4N60A4HD CS4N60A4HD

Silicon N-Channel Power MOSFET R CS4N60 A7HD General Description VDSS 600 V CS4N60 A7HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 7.3. Size:356K  wuxi china
 cs4n60a3tdy.pdf

CS4N60A4HD CS4N60A4HD

Silicon N-Channel Power MOSFET R CS4N60 A3TDY General Description VDSS 600 V CS4N60 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 7.4. Size:343K  wuxi china
 cs4n60arrd.pdf

CS4N60A4HD CS4N60A4HD

Silicon N-Channel Power MOSFET R CS4N60 ARRD General Description VDSS 600 V CS4N60 ARRD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 7.5. Size:220K  wuxi china
 cs4n60a3r.pdf

CS4N60A4HD CS4N60A4HD

Silicon N-Channel Power MOSFET R CS4N60 A3R General Description VDSS 600 V CS4N60 A3R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 7.6. Size:221K  wuxi china
 cs4n60a8hd.pdf

CS4N60A4HD CS4N60A4HD

Silicon N-Channel Power MOSFET R CS4N60 A8HD General Description VDSS 600 V CS4N60 A8HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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