CS5N65A7H Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: CS5N65A7H
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 32 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 15.5 ns
Cossⓘ - Выходная емкость: 71 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.9 Ohm
Тип корпуса: TO-126F
- подбор MOSFET транзистора по параметрам
CS5N65A7H Datasheet (PDF)
cs5n65a7h.pdf

Silicon N-Channel Power MOSFET R CS5N65 A7H General Description VDSS 650 V CS5N65 A7H, the silicon N-channel Enhanced ID 5 A PD(TC=25) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs5n65a8h.pdf

Silicon N-Channel Power MOSFET R CS5N65 A8H General Description VDSS 650 V CS5N65 A8H, the silicon N-channel Enhanced ID 5 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs5n65a4.pdf

Silicon N-Channel Power MOSFET R CS5N65 A4 General Description VDSS 650 V CS5N65 A4, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.6 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw
cs5n65a3.pdf

Silicon N-Channel Power MOSFET R CS5N65 A3 General Description VDSS 650 V CS5N65 A3, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.6 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: SJMN670R80ZF | APT5570AN | NDT6N70 | SIHF12N65E | 2SK1329 | IPD50R280CE | HGN027N06S
History: SJMN670R80ZF | APT5570AN | NDT6N70 | SIHF12N65E | 2SK1329 | IPD50R280CE | HGN027N06S



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