January 2001NDS8425Single N-Channel, 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis N-Channel 2.5V specified MOSFET is produced 7.4 A, 20 V. RDS(ON) = 0.022 @ VGS = 4.5 Vusing Fairchild Semiconductors advanced PowerRDS(ON) = 0.028 @ VGS = 2.7 VTrench process that has been especially tailored tominimize on-state resistance and

NDS8425www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-

February 1996 NDS8410Single N-Channel Enhancement Mode Field Effect TransistorGeneral Description Features10A, 30V. RDS(ON) = 0.015 @ VGS = 10V These N-Channel enhancement mode power field effectRDS(ON) = 0.020 @ VGS = 4.5V.transistors are produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process isHigh density cell design

June 1996 NDS8434Single P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel enhancement mode power field effect -6.5A, -20V. RDS(ON) = 0.035 @ VGS = -4.5Vtransistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.05 @ VGS = -2.7V.density, DMOS technology. This very high density process isHigh density cell design fo

October 2004NDS8410ASingle 30V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET are produced using 10.8 A, 30 V RDS(ON) = 12 m @ VGS = 10 VFairchilds proprietary, high cell density, DMOS RDS(ON) = 17 m @ VGS = 4.5 Vtechnology. This very high density process isespecially tailored to minimize on-state resistance and Ultra-low gate ch

March 1997 NDS8435A Single P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesSO-8 P-Channel enhancement mode power field effect-7.9 A, -30 V. RDS(ON) = 0.023 @ VGS = -10 Vtransistors are produced using Fairchild's proprietary, high cellRDS(ON) = 0.035 @ VGS = -4.5V.density, DMOS technology. This very high density process isHigh density cell

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NDS8434Awww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typical

NDS8435Awww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D