CS6N60A4D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CS6N60A4D
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 85 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 6 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 17 nC
Время нарастания (tr): 14 ns
Выходная емкость (Cd): 74 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.7 Ohm
Тип корпуса: TO-252
CS6N60A4D Datasheet (PDF)
cs6n60a4d.pdf
Silicon N-Channel Power MOSFET R CS6N60 A4D General Description VDSS 600 V CS6N60 A4D, the silicon N-channel Enhanced ID 6 A PD(TC=25) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs6n60a4ty.pdf
Silicon N-Channel Power MOSFET R CS6N60 A4TY General Description VDSS 600 V CS6N60 A4TY, the silicon N-channel Enhanced ID 6 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs6n60a3ty.pdf
Silicon N-Channel Power MOSFET R CS6N60 A3TY General Description VDSS 600 V CS6N60 A3TY, the silicon N-channel Enhanced ID 6 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs6n60a3d.pdf
Silicon N-Channel Power MOSFET R CS6N60 A3D General Description VDSS 600 V CS6N60 A3D, the silicon N-channel Enhanced ID 6 A PD(TC=25) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: CS5N65D
