NDS8936 datasheet, аналоги, основные параметры

Наименование производителя: NDS8936  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm

Тип корпуса: SO8

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Аналог (замена) для NDS8936

- подборⓘ MOSFET транзистора по параметрам

 

NDS8936 даташит

 ..1. Size:198K  fairchild semi
 nds8936.pdf pdf_icon

NDS8936

June 1997 NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 5.3A, 30V. RDS(ON) = 0.035 @ VGS = 10V transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.05 @ VGS = 4.5V. density, DMOS technology. This very high density process is especially tailored to minimize

 8.1. Size:82K  fairchild semi
 nds8934.pdf pdf_icon

NDS8936

March 1996 NDS8934 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -3.8A, -20V. RDS(ON) = 0.07 @ VGS = -4.5V transistors are produced using Fairchild's proprietary, RDS(ON) = 0.1 @ VGS = -2.7V. high cell density, DMOS technology. This very high High density cell design for extremely low RDS

 9.1. Size:222K  fairchild semi
 nds8958.pdf pdf_icon

NDS8936

July 1996 NDS8958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field N-Channel 5.3A, 30V, RDS(ON)=0.035 @ VGS=10V. effect transistors are produced using Fairchild's proprietary, P-Channel -4.0A, -30V, RDS(ON)=0.065 @ VGS=-10V. high cell density, DMOS technology. This very high density

 9.2. Size:199K  fairchild semi
 nds8947.pdf pdf_icon

NDS8936

March 1996 NDS8947 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -4A, -30V. RDS(ON) = 0.065 @ VGS = -10V transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.1 @ VGS = -4.5V. density, DMOS technology. This very high density process is especially tailored to minimi

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