Справочник MOSFET. CS740S

 

CS740S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CS740S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 134 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 75 ns
   Cossⓘ - Выходная емкость: 150 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.55 Ohm
   Тип корпуса: TO-263-2L

 Аналог (замена) для CS740S

 

 

CS740S Datasheet (PDF)

 ..1. Size:235K  lzg
 cs740s.pdf

CS740S CS740S

IRF740S(CS740S) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switch. /Absolute maximum ratings(Ta=25)

 0.1. Size:1642K  1
 jcs740vc jcs740rc jcs740sc jcs740bc jcs740cc jcs740fc.pdf

CS740S CS740S

N RN-CHANNEL MOSFETJCS740C MAIN CHARACTERISTICS Package 10 A ID 400 V VDSS Rdson 0.54 @Vgs=10V19.7nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

 0.2. Size:2382K  jilin sino
 jcs740vc jcs740rc jcs740bc jcs740sc jcs740cc jcs740fc.pdf

CS740S CS740S

N RN-CHANNEL MOSFET JCS740C MAIN CHARACTERISTICS Package ID 10 A VDSS 400 V Rdson-max(@Vgs=10V) 0.54 Qg 19.7nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

 9.1. Size:337K  crhj
 cs740f a9h.pdf

CS740S CS740S

Silicon N-Channel Power MOSFET R CS740F A9H General Description VDSS 400 V CS740F A9H, the silicon N-channel Enhanced ID 10 A PD (TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 9.2. Size:225K  crhj
 cs740 a0h.pdf

CS740S CS740S

Silicon N-Channel Power MOSFET R CS740 A0H General Description VDSS 400 V CS740 A0H, the silicon N-channel Enhanced ID 10 A PD (TC=25) 120 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 9.3. Size:346K  crhj
 cs740 a8h.pdf

CS740S CS740S

Silicon N-Channel Power MOSFET R CS740 A8H General Description VDSS 400 V CS740 A8H, the silicon N-channel Enhanced ID 10 A PD (TC=25) 120 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 9.4. Size:259K  lzg
 cs740.pdf

CS740S CS740S

IRF740(CS740) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switch. /Absolute maximum ratings(Ta=25)

 9.5. Size:292K  lzg
 cs740f.pdf

CS740S CS740S

IRFS740(CS740F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)

 9.6. Size:337K  wuxi china
 cs740fa9h.pdf

CS740S CS740S

Silicon N-Channel Power MOSFET R CS740F A9H General Description VDSS 400 V CS740F A9H, the silicon N-channel Enhanced ID 10 A PD (TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 9.7. Size:315K  wuxi china
 cs740a8h.pdf

CS740S CS740S

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS740 A8H General Description VDSS 400 V CS740 A8H, the silicon N-channel Enhanced ID 10 A PD (TC=25) 120 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor

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