CS840FA9H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CS840FA9H
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 45 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 8 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 28 nC
Время нарастания (tr): 32 ns
Выходная емкость (Cd): 130 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.75 Ohm
Тип корпуса: TO-220F
CS840FA9H Datasheet (PDF)
cs840fa9h.pdf
Silicon N-Channel Power MOSFET R CS840F A9H General Description VDSS 500 V CS840F A9H, the silicon N-channel Enhanced ID 8 A PD (TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs840fa9d.pdf
Silicon N-Channel Power MOSFET R CS840F A9D General Description VDSS 500 V CS840F A9D, the silicon N-channel Enhanced ID 7 A PD(TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
cs840f a9h.pdf
Silicon N-Channel Power MOSFET R CS840F A9H General Description VDSS 500 V CS840F A9H, the silicon N-channel Enhanced ID 8 A PD (TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs840f a9d.pdf
Silicon N-Channel Power MOSFET R CS840F A9D General Description VDSS 500 V CS840F A9D, the silicon N-channel Enhanced ID 7 A PD(TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
cs840f.pdf
IRFS840(CS840F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
