Справочник MOSFET. CS840FA9H

 

CS840FA9H Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: CS840FA9H
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 32 ns
   Cossⓘ - Выходная емкость: 130 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.75 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для CS840FA9H

   - подбор ⓘ MOSFET транзистора по параметрам

 

CS840FA9H Datasheet (PDF)

 ..1. Size:346K  wuxi china
 cs840fa9h.pdf pdf_icon

CS840FA9H

Silicon N-Channel Power MOSFET R CS840F A9H General Description VDSS 500 V CS840F A9H, the silicon N-channel Enhanced ID 8 A PD (TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 6.1. Size:519K  wuxi china
 cs840fa9d.pdf pdf_icon

CS840FA9H

Silicon N-Channel Power MOSFET R CS840F A9D General Description VDSS 500 V CS840F A9D, the silicon N-channel Enhanced ID 7 A PD(TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 8.1. Size:346K  crhj
 cs840f a9h.pdf pdf_icon

CS840FA9H

Silicon N-Channel Power MOSFET R CS840F A9H General Description VDSS 500 V CS840F A9H, the silicon N-channel Enhanced ID 8 A PD (TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 8.2. Size:521K  crhj
 cs840f a9d.pdf pdf_icon

CS840FA9H

Silicon N-Channel Power MOSFET R CS840F A9D General Description VDSS 500 V CS840F A9D, the silicon N-channel Enhanced ID 7 A PD(TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... CS830A8RD , CS830F , CS830FA9RD , CS840 , CS840A8D , CS840A8H , CS840F , CS840FA9D , IRF9540N , CS8473 , CS8N25A4H , CS8N25A8H , CS8N60A8H , CS8N60F , CS8N60FA9H , CS8N65A0H , CS8N65A8H .

History: STB8NM60N | WM05N03M | PHP44N06LT | IRFI740G | WM05P01M | CS8N25A4H | STM8309

 

 
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