CS8N60FA9H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CS8N60FA9H
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 45 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 8 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 29 nC
Время нарастания (tr): 15 ns
Выходная емкость (Cd): 115 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.2 Ohm
Тип корпуса: TO-220F
Аналог (замена) для CS8N60FA9H
CS8N60FA9H Datasheet (PDF)
cs8n60fa9h.pdf
CS8N60FA9H600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability.0.189(4.80)0.173(4.40) Low gate charge.0.409(10.40)0.378(9.60) 0.114(2.90) Low reverse transfer capacitances.0.098(2.50) 100% single pulse avalanche energy test.0.638(16.20)0.606(15.40)Marking code Mechanical dataG D S Epo
cs8n60fa9h.pdf
Silicon N-Channel Power MOSFET R CS8N60F A9H General Description VDSS 600 V CS8N60F A9H, the silicon N-channel Enhanced ID 8 A PD(TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
jcs8n60s jcs8n60b jcs8n60c jcs8n60f.pdf
N RN-CHANNEL MOSFETJCS8N60 Package MAIN CHARACTERISTICS 7.5 A ID 600 V VDSS Rdson 1.2 @Vgs=10V 54 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA
jcs8n60vc jcs8n60rc jcs8n60bc jcs8n60sc jcs8n60cc jcs8n60fc.pdf
N RN-CHANNEL MOSFET JCS8N60C Package MAIN CHARACTERISTICS ID 7.0 A VDSS 600 V Rdson 1.6 @Vgs=10VQg 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATU
jcs8n60bb jcs8n60sb jcs8n60cb jcs8n60fb.pdf
N RN-CHANNEL MOSFET JCS8N60B MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.2 @Vgs=10V Qg-typ 25 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L
jcs8n60f.pdf
N RN-CHANNEL MOSFETJCS8N60C Package MAIN CHARACTERISTICS ID 7.0 A VDSS 600 V Rdson 1.3 @Vgs=10VQg 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES
cs8n60f a9h.pdf
Silicon N-Channel Power MOSFET R CS8N60F A9H General Description VDSS 600 V CS8N60F A9H, the silicon N-channel Enhanced ID 8 A PD(TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
cs8n60f.pdf
BRF8N60(CS8N60F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)
cs8n60f cs8n60p cs8n60u cs8n60d cs8n65f-b.pdf
CS8N60F,CS8N60P, nvertSuzhou Convert Semiconductor Co ., Ltd.CS8N60U,CS8N60D,CS8N65F-B600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS
cs8n60f cs8n60p cs8n60u cs8n60d.pdf
nvertCS8N60F,CS8N60P,CS8N60U,CS8N60DSuzhou Convert Semiconductor Co ., Ltd.600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS8N60F TO-220F
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