Справочник MOSFET. CS8N90FA9HD

 

CS8N90FA9HD Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: CS8N90FA9HD
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 57 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 152 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
   Тип корпуса: TO-220F
     - подбор MOSFET транзистора по параметрам

 

CS8N90FA9HD Datasheet (PDF)

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CS8N90FA9HD

Silicon N-Channel Power MOSFET R CS8N90F A9HD VDSS 900 V General Description ID 8 A CS8N90F A9HD, the silicon N-channel Enhanced PD (TC=25) 57 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.3 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.1. Size:770K  crhj
 cs8n90f a9hd.pdf pdf_icon

CS8N90FA9HD

Silicon N-Channel Power MOSFET R CS8N90F A9HD VDSS 900 V General Description ID 8 A CS8N90F A9HD, the silicon N-channel Enhanced PD (TC=25) 57 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.3 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.2. Size:652K  crhj
 cs8n90f a9.pdf pdf_icon

CS8N90FA9HD

Silicon N-Channel Power MOSFET R CS8N90F A9 VDSS 900 V General Description ID 8 A CS8N90F A9, the silicon N-channel Enhanced PD (TC=25) 57 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.2 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 7.3. Size:666K  convert
 cs8n90f cs8n90p.pdf pdf_icon

CS8N90FA9HD

nvertSuzhou Convert Semiconductor Co ., Ltd.CS8N90F, CS8N90P900V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS8N90F TO-220F CS8N90FCS8N9

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SPC9N50G | HMS4296B | 2SK3572-Z | XP161 | OSG55R140FF | IRFP257 | DMNH6042SK3

 

 
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