CSD16406Q3. Аналоги и основные параметры
Наименование производителя: CSD16406Q3
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 2.7 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 16 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 19 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 12.9 ns
Cossⓘ - Выходная емкость: 680 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0053 Ohm
Тип корпуса: SON3.3X3.3 SUPERSO8
Аналог (замена) для CSD16406Q3
- подборⓘ MOSFET транзистора по параметрам
CSD16406Q3 даташит
..1. Size:728K texas
csd16406q3.pdf 

CSD16406Q3 www.ti.com SLPS202A AUGUST 2009 REVISED SEPTEMBER 2010 N-Channel NexFET Power MOSFETs Check for Samples CSD16406Q3 1 FEATURES PRODUCT SUMMARY 2 Ultra Low Qg and Qgd VDS Drain to Source Voltage 25 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 5.8 nC Avalanche Rated Qgd Gate Charge Gate to Drain 1.5 nC Pb Free Terminal Plating VGS = 4.5V
..2. Size:858K cn vbsemi
csd16406q3.pdf 

CSD16406Q3 www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) RDS(on) ( ) Typ. Qg (Typ.) ID (A) TrenchFET Power MOSFET 0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested 30 33.5 nC 0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Motor Control I
7.1. Size:881K texas
csd16401q5.pdf 

Sample & Support & Reference Product Technical Tools & Buy Community Design Folder Documents Software CSD16401Q5 SLPS200B AUGUST 2009 REVISED SEPTEMBER 2015 CSD16401Q5 25-V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultralow Qg and Qgd TA = 25 C VALUE UNIT Low Thermal Resistance VDS Drain-to-Source voltage 25 V Avalanche Rated Qg Gate Charge,
7.2. Size:196K texas
csd16409q3.pdf 

CSD16409Q3 www.ti.com SLPS204A AUGUST 2009 REVISED MAY 2010 N-Channel NexFET Power MOSFETs Check for Samples CSD16409Q3 1 FEATURES PRODUCT SUMMARY 2 Ultra Low Qg and Qgd VDS Drain to Source Voltage 25 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 4 nC Avalanche Rated Qgd Gate Charge Gate to Drain 1 nC Pb Free Terminal Plating VGS = 4.5V 9.5 m
7.3. Size:741K texas
csd16404q5a.pdf 

CSD16404Q5A www.ti.com SLPS198B AUGUST 2009 REVISED APRIL 2010 N-Channel NexFET Power MOSFET Check for Samples CSD16404Q5A 1 FEATURES PRODUCT SUMMARY 2 Ultralow Qg and Qgd VDS Drain to Source Voltage 25 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 6.5 nC Avalanche Rated Qgd Gate Charge Gate to Drain 1.7 nC Pb Free Terminal Plating VGS = 4.5V 5.
7.4. Size:696K texas
csd16408q5.pdf 

CSD16408Q5 www.ti.com SLPS228A OCTOBER 2009 REVISED SEPTEMBER 2010 N-Channel NexFET Power MOSFET 1 FEATURES PRODUCT SUMMARY 2 Ultralow Qg and Qgd VDS Drain-to-source voltage 25 V Low Thermal Resistance Qg Gate charge, total (4.5 V) 6.7 nC Avalanche Rated Qgd Gate charge, gate-to-drain 1.9 nC SON 5-mm 6-mm Plastic Package VGS = 4.5 V 5.4 m rDS(on) D
7.5. Size:206K texas
csd16407q5.pdf 

CSD16407Q5 www.ti.com SLPS203A AUGUST 2009 REVISED SEPTEMBER 2010 N-Channel NexFET Power MOSFETs Check for Samples CSD16407Q5 1 FEATURES PRODUCT SUMMARY 2 Ultralow Qg and Qgd VDS Drain-to0source voltage 25 V Low Thermal Resistance Qg Gate charge, total (4.5 V) 13.3 nC Avalanche Rated Qgd Gate charge, gate-to-drain 3.5 nC SON 5-mm 6-mm Plastic Package
7.6. Size:345K texas
csd16403q5a.pdf 

CSD16403Q5A www.ti.com SLPS201A AUGUST 2009 REVISED SEPTEMBER 2010 N-Channel NexFET Power MOSFETs Check for Samples CSD16403Q5A 1 FEATURES PRODUCT SUMMARY 2 Ultra Low Qg and Qgd VDS Drain to Source Voltage 25 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 13.3 nC Avalanche Rated Qgd Gate Charge Gate to Drain 3.5 nC Pb Free Terminal Plating VGS = 4.
7.7. Size:473K ciclon
csd16409q3.pdf 

N-Channel CICLON NexFET Power MOSFETs CSD16409Q3 Features Product Summary Ultra Low Qg & Qgd VDS 25 V S 1 8 D S 1 8 D Qg 4.0 nC Low Thermal Resistance G D S 2 7 D S 2 7 D Qgd 1.0 nC S D Avalanche Rated D S S 3 6 D VGS=4.5V 9.5 m S 3 6 D D RDS(on) S D D G 4 5 D G 4 5 D VGS=10V 6.2 m Pb Free Terminal Plating Vth 2.0 V RoHS Comp
7.8. Size:528K ciclon
csd16404q5a.pdf 

N-Channel CICLON NexFET Power MOSFETs CSD16404Q5A Features Product Summary Ultra Low Qg & Qgd VDS 25 V D S 1 8 D S 1 8 D Qg 6.5 nC Low Thermal Resistance D S 2 7 D G S 2 7 D Qgd 1.7 nC D Avalanche Rated S D S 3 6 D S 3 6 D VGS=4.5V 5.7 m S RDS(on) D D G 4 5 D G 4 5 D VGS=10V 4.1 m Pb Free Terminal Plating S Vth 1.8 V RoHS Compl
7.9. Size:478K ciclon
csd16407q5.pdf 

N-Channel CICLON NexFET Power MOSFETs CSD16407Q5 Product Summary Features Ultra Low Qg & Qgd VDS 25 V D S 1 8 D S 1 8 D Qg 13.3 nC Low Thermal Resistance D S 2 7 D G S 2 7 D Qgd 3.5 nC D Avalanche Rated S D S 3 6 D S 3 6 D VGS=4.5V 2.5 m S RDS(on) D D G 4 5 D G 4 5 D VGS=10V 1.8 m Pb Free Terminal Plating S Vth 1.6 V RoHS Compli
7.10. Size:514K ciclon
csd16403q5a.pdf 

N-Channel CICLON NexFET Power MOSFETs CSD16403Q5A Features Product Summary Ultra Low Qg & Qgd VDS 25 V D S 1 8 D S 1 8 D Qg 13.3 nC Low Thermal Resistance D S 2 7 D G S 2 7 D Qgd 3.5 nC D Avalanche Rated S D S 3 6 D S 3 6 D VGS=4.5V 2.9 m S RDS(on) D D G 4 5 D G 4 5 D VGS=10V 2.2 m Pb Free Terminal Plating S Vth 1.6 V RoHS Complia
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