NDS9955 - описание и поиск аналогов

 

NDS9955 - Аналоги. Основные параметры


   Наименование производителя: NDS9955
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm
   Тип корпуса: SO8

 Аналог (замена) для NDS9955

 

NDS9955 технические параметры

 8.1. Size:209K  fairchild semi
 nds9956a.pdf pdf_icon

NDS9955

February 1996 NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 3.7A, 30V. RDS(ON) = 0.08 @ VGS = 10V transistors are produced using Fairchild's proprietary, high High density cell design for extremely low RDS(ON). cell density, DMOS technology. This very high density process is especia

 8.2. Size:210K  fairchild semi
 nds9953a.pdf pdf_icon

NDS9955

February 1996 NDS9953A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -2.9A, -30V. RDS(ON) = 0.13 @ VGS = -10V. transistors are produced using Fairchild's proprietary, high High density cell design for extremely low RDS(ON). cell density, DMOS technology. This very high density process is espe

 8.3. Size:208K  fairchild semi
 nds9959.pdf pdf_icon

NDS9955

February 1996 NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 2.0A, 50V. RDS(ON) = 0.3 @ VGS = 10V transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is High density cell design for extremely low RDS(ON). especially

 8.4. Size:234K  fairchild semi
 nds9952a.pdf pdf_icon

NDS9955

February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power N-Channel 3.7A, 30V, RDS(ON)=0.08 @ VGS=10V. field effect transistors are produced using Fairchild's P-Channel -2.9A, -30V, RDS(ON)=0.13 @ VGS=-10V. proprietary, high cell density, DMOS technology. This very high de

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Другие MOSFET... NDS9435A , NDS9925A , NDS9933A , NDS9936 , NDS9945 , NDS9947 , NDS9948 , NDS9953A , MMIS60R580P , NDS9956A , NDS9957 , NDS9959 , NDT014 , NDT014L , NDT2955 , NDT3055 , NDT3055L .

 

 
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