CSD17303Q5 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CSD17303Q5
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 3.2 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 10 V
Пороговое напряжение включения |Ugs(th)|: 1.6 V
Максимально допустимый постоянный ток стока |Id|: 32 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 18 nC
Время нарастания (tr): 16 ns
Выходная емкость (Cd): 1440 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0024 Ohm
Тип корпуса: SON5X6 SUPERSO8
Аналог (замена) для CSD17303Q5
CSD17303Q5 Datasheet (PDF)
csd17303q5.pdf
CSD17303Q5www.ti.com SLPS246B JANUARY 2010 REVISED SEPTEMBER 201030V N-Channel NexFET Power MOSFETCheck for Samples: CSD17303Q51FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 18 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 4 nC Avalanche RatedVGS = 3V
csd17302q5a.pdf
CSD17302Q5Awww.ti.com SLPS216A FEBRUARY 2010 REVISED JULY 201030V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17302Q5A1FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 5.4 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 1.2 nC Avalanche RatedVGS
csd17305q5a.pdf
CSD17305Q5Awww.ti.com SLPS254A FEBRUARY 2010 REVISED JULY 201030V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17305Q5A1FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 14.1 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 3 nC Avalanche RatedVGS =
csd17308q3.pdf
CSD17308Q3www.ti.com SLPS262A FEBRUARY 2010 REVISED OCTOBER 201030V N-Channel NexFET Power MOSFETsCheck for Samples: CSD17308Q3PRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 30 V2 Optimized for 5V Gate DriveQg Gate Charge Total (4.5V) 3.9 nC Ultra Low Qg and QgdQgd Gate Charge Gate to Drain 0.8 nC Low Thermal ResistanceVGS = 3V 12.5 m
csd17309q3.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17309Q3SLPS261B MARCH 2010 REVISED SEPTEMBER 2014CSD17309Q3 30-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Optimized for 5 V Gate DriveTA = 25C TYPICAL VALUE UNIT Ultra-Low Qg and QgdVDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Cha
csd17304q3.pdf
CSD17304Q3www.ti.com SLPS258A FEBRUARY 2010 REVISED OCTOBER 201030V N-Channel NexFET Power MOSFETsCheck for Samples: CSD17304Q3PRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 30 V2 Optimized for 5V Gate DriveQg Gate Charge Total (4.5V) 5.1 nC Ultralow Qg and QgdQgd Gate Charge Gate to Drain 1.1 nC Low Thermal ResistanceVGS = 3V 9.8 m Av
csd17307q5a.pdf
CSD17307Q5Awww.ti.com SLPS252A FEBRUARY 2010 REVISED JULY 201030V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17307Q5A1FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 4 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 1 nC Avalanche RatedVGS = 3V
csd17301q5a.pdf
CSD17301Q5Awww.ti.com SLPS215C JANUARY 2010 REVISED SEPTEMBER 201030V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17301Q5A1FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 19 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 4.3 nC Avalanche RatedVG
csd17306q5a.pdf
CSD17306Q5Awww.ti.com SLPS253A FEBRUARY 2010 REVISED JULY 201030V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17306Q5A1FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 11.8 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 2.4 nC Avalanche RatedVGS
csd17301q5.pdf
CSD17301Q5www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested0.0018 at VGS = 10 V 100APPLICATIONS30 82 nC0.0025 at VGS = 4.5 V 90 OR-ing ServerDDFN5X6Top ViewTop View Bottom View182736 G45PIN1SN-Channel MOSFETABSOLUTE M
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