CSD17322Q5A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CSD17322Q5A
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 3 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 10 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 16 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 3.6 nC
Время нарастания (tr): 12 ns
Выходная емкость (Cd): 390 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0088 Ohm
Тип корпуса: SON5X6 SO-8
Аналог (замена) для CSD17322Q5A
CSD17322Q5A Datasheet (PDF)
csd17322q5a.pdf
CSD17322Q5Awww.ti.com SLPS330 JUNE 201130V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17322Q5A1FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 3.6 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 1.1 nC Avalanche RatedVGS = 4.5V 10 mRDS(on) Dra
csd17327q5a.pdf
CSD17327Q5Awww.ti.com SLPS332 JUNE 201130V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17327Q5APRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 30 V2 Ultralow Qg and QgdQg Gate Charge Total (4.5V) 2.8 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 0.8 nC Avalanche RatedVGS = 4.5V 12.5 mRDS(on) Drain to Source On Resistance
csd17381f4.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17381F4SLPS411D APRIL 2013 REVISED OCTOBER 2014CSD17381F4 30 V N-Channel FemtoFET MOSFET1 FeaturesProduct Summary1 Ultra-Low On-ResistanceTA = 25C TYPICAL VALUE UNIT Ultra-Low Qg and QgdVDS Drain-to-Source Voltage 30 V Low Threshold VoltageQg Gate Charge Total (4
csd17302q5a.pdf
CSD17302Q5Awww.ti.com SLPS216A FEBRUARY 2010 REVISED JULY 201030V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17302Q5A1FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 5.4 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 1.2 nC Avalanche RatedVGS
csd17310q5a.pdf
CSD17310Q5Awww.ti.com SLPS255A FEBRUARY 2010 REVISED JULY 201030V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17310Q5A1FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 8.9 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 2.1 nC Avalanche RatedVGS
csd17313q2q1.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17313Q2Q1SLPS427D OCTOBER 2012 REVISED SEPTEMBER 2015CSD17313Q2Q1 30-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Qualified for Automotive ApplicationsTA = 25C TYPICAL VALUE UNIT Optimized for 5-V Gate DriveVDS Drain-to-Source Voltage 30 V Ultra-Low Q
csd17311q5.pdf
CSD17311Q5www.ti.com SLPS257A MARCH 2010 REVISED SEPTEMBER 201030V N-Channel NexFET Power MOSFETCheck for Samples: CSD17311Q5PRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 30 V2 Optimized for 5V Gate DriveQg Gate Charge Total (4.5V) 24 nC Ultra Low Qg and QgdQgd Gate Charge Gate to Drain 5.2 nC Low Thermal ResistanceVGS = 3V 2.3 m Avala
csd17313q2.pdf
CSD17313Q2www.ti.com SLPS260B MARCH 2010 REVISED OCTOBER 201030V N-Channel NexFET Power MOSFETPRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 30 V Optimized for 5V Gate DriveQg Gate Charge Total (4.5V) 2.1 nC Ultra Low Qg and QgdQgd Gate Charge Gate to Drain 0.4 nC Low Thermal ResistanceVGS = 3V 31 m Pb FreeRDS(on) Drain to Source On Resi
csd17305q5a.pdf
CSD17305Q5Awww.ti.com SLPS254A FEBRUARY 2010 REVISED JULY 201030V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17305Q5A1FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 14.1 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 3 nC Avalanche RatedVGS =
csd17308q3.pdf
CSD17308Q3www.ti.com SLPS262A FEBRUARY 2010 REVISED OCTOBER 201030V N-Channel NexFET Power MOSFETsCheck for Samples: CSD17308Q3PRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 30 V2 Optimized for 5V Gate DriveQg Gate Charge Total (4.5V) 3.9 nC Ultra Low Qg and QgdQgd Gate Charge Gate to Drain 0.8 nC Low Thermal ResistanceVGS = 3V 12.5 m
csd17309q3.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17309Q3SLPS261B MARCH 2010 REVISED SEPTEMBER 2014CSD17309Q3 30-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Optimized for 5 V Gate DriveTA = 25C TYPICAL VALUE UNIT Ultra-Low Qg and QgdVDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Cha
csd17304q3.pdf
CSD17304Q3www.ti.com SLPS258A FEBRUARY 2010 REVISED OCTOBER 201030V N-Channel NexFET Power MOSFETsCheck for Samples: CSD17304Q3PRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 30 V2 Optimized for 5V Gate DriveQg Gate Charge Total (4.5V) 5.1 nC Ultralow Qg and QgdQgd Gate Charge Gate to Drain 1.1 nC Low Thermal ResistanceVGS = 3V 9.8 m Av
csd17307q5a.pdf
CSD17307Q5Awww.ti.com SLPS252A FEBRUARY 2010 REVISED JULY 201030V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17307Q5A1FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 4 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 1 nC Avalanche RatedVGS = 3V
csd17303q5.pdf
CSD17303Q5www.ti.com SLPS246B JANUARY 2010 REVISED SEPTEMBER 201030V N-Channel NexFET Power MOSFETCheck for Samples: CSD17303Q51FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 18 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 4 nC Avalanche RatedVGS = 3V
csd17301q5a.pdf
CSD17301Q5Awww.ti.com SLPS215C JANUARY 2010 REVISED SEPTEMBER 201030V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17301Q5A1FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 19 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 4.3 nC Avalanche RatedVG
csd17312q5.pdf
CSD17312Q5www.ti.com SLPS256A MARCH 2010 REVISED OCTOBER 201030V N-Channel NexFET Power MOSFETCheck for Samples: CSD17312Q5PRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 30 V2 Optimized for 5V Gate DriveQg Gate Charge Total (4.5V) 28 nC Ultra Low Qg and QgdQgd Gate Charge Gate to Drain 6 nC Low Thermal ResistanceVGS = 3V 1.8 m Avalanch
csd17306q5a.pdf
CSD17306Q5Awww.ti.com SLPS253A FEBRUARY 2010 REVISED JULY 201030V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17306Q5A1FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 11.8 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 2.4 nC Avalanche RatedVGS
csd17301q5.pdf
CSD17301Q5www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested0.0018 at VGS = 10 V 100APPLICATIONS30 82 nC0.0025 at VGS = 4.5 V 90 OR-ing ServerDDFN5X6Top ViewTop View Bottom View182736 G45PIN1SN-Channel MOSFETABSOLUTE M
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